AP4575GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D1 D2
D1 D1
D1
▼ Low On-resistance
▼ Fast Switching Performance
N-CH BVDSS
D2
D2
SO-8
SO-8
G2
G2
S2
S2
G1
S1 G1
S1
Description
60V
RDS(ON)
36mΩ
ID
P-CH BVDSS
RDS(ON)
ID
6A
-60V
72mΩ
-4.2A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D2
D1
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
60
-60
V
±20
±20
V
Continuous Drain Current
3
6
-4.2
A
Continuous Drain Current
3
4.7
-3.3
A
30
-30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200607041
AP4575GM
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.04
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=5A
-
-
36
mΩ
VGS=4.5V, ID=3A
-
-
42
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=5A
-
8
-
S
o
VDS=60V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=48V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=5A
-
18
29
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
2
td(on)
Turn-on Delay Time
VDS=30V
-
10
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
32
-
ns
tf
Fall Time
RD=30Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
1670 2670
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
117
-
pF
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
48
-
nC
AP4575GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-60
-
-
V
-
-0.04
-
V/℃
VGS=-10V, ID=-4A
-
-
72
mΩ
VGS=-4.5V, ID=-3A
-
-
88
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
Max. Units
VDS=-10V, ID=-4A
-
6
-
S
o
VDS=-60V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=-4A
-
21
34
nC
Qgs
Gate-Source Charge
VDS=-48V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
9
-
nC
VDS=-30V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
82
-
ns
tf
Fall Time
RD=30Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
1780 2850
pF
Coss
Output Capacitance
VDS=-25V
-
157
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
IS=-4A, VGS=0V
-
43
-
ns
dI/dt=-100A/µs
-
87
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
AP4575GM
N-Channel
50
60
T A = 25 o C
40
40
ID , Drain Current (A)
ID , Drain Current (A)
50
10V
7.0V
5.0V
4.5V
TA=150oC
10V
7.0V
5.0V
4.5V
30
20
30
20
V G =3.0V
V G =3.0V
10
10
0
0
0
1
2
3
4
5
6
7
0
1
V DS , Drain-to-Source Voltage (V)
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
38
1.8
ID=3A
36
I D =5A
V G =10V
1.6
o
Normalized RDS(ON)
T A =25 C
34
RDS(ON) (mΩ )
2
32
1.4
1.2
1.0
30
0.8
28
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
5
1.3
Normalized VGS(th) (V)
4
IS(A)
3
T j =150 o C
T j =25 o C
2
1.1
0.9
0.7
1
0.5
0.3
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4575GM
N-Channel
f=1.0MHz
10000
I D =5A
V DS =48V
12
10
C iss
C (pF)
VGS , Gate to Source Voltage (V)
14
8
1000
6
4
2
C oss
C rss
0
100
0
5
10
15
20
25
30
35
1
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
1
10ms
100ms
T A =25 o C
Single Pulse
0.1
1s
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135o C/W
DC
0.01
0.001
0.1
1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q
AP4575GM
P-Channel
40
40
30
TA=150oC
35
-ID , Drain Current (A)
-ID , Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
T A = 25 o C
35
25
20
15
V G =-3.0V
10
25
20
15
V G =-3.0V
10
5
5
0
0
0
1
2
3
4
5
6
0
7
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
ID=-3A
ID=-4A
V G =-10V
1.6
T A =25 o C
Normalized R DS(ON)
75
RDS(ON) (mΩ )
-10V
-7.0V
-5.0V
-4.5V
30
70
1.4
1.2
1.0
65
0.8
0.6
60
2
4
6
8
-50
10
0
50
100
150
o
-V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
1.6
1.3
T j =150 o C
2
Normalized -VGS(th) (V)
-IS(A)
3
T j =25 o C
1.1
0.8
1
0.6
0.3
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4575GM
P-Channel
f=1.0MHz
10000
I D =-4A
V DS =-48V
12
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
C iss
1000
4
C oss
C rss
100
0
0.0
10.0
20.0
30.0
40.0
50.0
60.0
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q