A-POWER AP4955M

AP4955M
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
▼ Simple Drive Requirement
D2
D1
▼ Low Gate Charge
D1
▼ Fast Switching Characteristic
G2
BVDSS
-20V
RDS(ON)
45mΩ
ID
-5.6A
S2
S1
G1
Description
TThe Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-20
V
±20
V
3
-5.6
A
3
-4.5
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
20
A
[email protected]=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200303041
AP4955M
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V, ID=-5A
-
-
45
mΩ
VGS=-2.5V, ID=-4A
-
-
65
mΩ
-0.5
-
-1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=-250uA
VDS=-5V, ID=-5A
-
9
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-5A
-
19
30
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-10V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
52
-
ns
tf
Fall Time
RD=10Ω
-
24
-
ns
Ciss
Input Capacitance
VGS=0V
-
1400 2240
pF
Coss
Output Capacitance
VDS=-20V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Min.
Typ.
IS=-1.6A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
32
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
22
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad.
AP4955M
70
60
50
-4.5V
-4.5V
-ID , Drain Current (A)
-ID , Drain Current (A)
-5.0V
T A = 150 o C
-5.0V
T A = 25 o C
60
50
40
30
-3.0V
20
-2.5V
40
30
-3.0V
20
-2.5V
10
10
V G =- 2.0 V
V G =- 2.0 V
0
0
0
1
2
3
4
5
6
7
8
0
9
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
7
8
9
Fig 2. Typical Output Characteristics
55
1.6
I D = -4 A
50
I D =-5A
V G =-10V
1.4
Normalized R DS(ON)
o
T A =25 C
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
45
40
1.2
1.0
0.8
35
0.6
30
2
3
4
5
-50
6
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
2.0
4
1.5
-IS(A)
T j =150 o C
-VGS(th) (V)
3
T j =25 o C
2
1.0
0.5
1
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4955M
f=1.0MHz
10000
I D =-5A
V DS =-16V
12
10
8
C (pF)
-VGS , Gate to Source Voltage (V)
14
C iss
1000
6
4
C oss
C rss
2
0
100
0
10
20
30
40
50
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
1ms
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
o
Rthja=135 C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q