A-POWER AP70L02GP

AP70L02GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching
BVDSS
25V
RDS(ON)
9mΩ
ID
G
66A
S
Description
The Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70L02GP) is available for low-profile applications.
G
Absolute Maximum Ratings
Symbol
Parameter
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
66
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
42
A
1
IDM
Pulsed Drain Current
210
A
[email protected]=25℃
Total Power Dissipation
66
W
Linear Derating Factor
0.53
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
1.9
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200831073-1/6
AP70L02GS/P
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
25
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=33A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
18
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=33A
-
25
-
S
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=20V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=± 20V
-
-
±100
nA
ID=33A
-
23
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
3
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
17
nC
VDS=15V
-
8.8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=33A
-
95
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=0.45Ω
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
790
-
pF
Coss
Output Capacitance
VDS=25V
-
475
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Min.
Typ.
-
-
66
A
-
-
210
A
-
-
1.26
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.26V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
Tj=25℃, IS=66A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/6
AP70L02GS/P
140
250
V G =10V
T C =25 o C
V G =10V
T C =150 o C
V G =8.0V
120
V G =8.0V
200
V G =6.0V
ID , Drain Current (A)
ID , Drain Current (A)
100
150
V G =6.0V
100
V G =5.0V
80
V G =5.0V
60
V G =4.0V
40
50
V G =4.0V
20
0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
23
I D =10A
T c =25 ℃
21
I D =10A
1.6
V G =10V
19
1.4
Normalized R DS(ON)
RDS(ON) (mΩ)
17
15
13
11
1.2
1
9
0.8
7
0.6
5
2
3
4
5
6
7
8
9
10
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
11
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3/6
80
80
70
70
60
60
50
50
PD (W)
ID , Drain Current (A)
AP70L02GS/P
40
40
30
30
20
20
10
10
0
0
25
50
75
100
125
150
0
50
100
150
T c ,Case Temperature ( o C)
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
1000
Normalized Thermal Response (R thjc)
DUTY=0.5
100
ID (A)
10us
100us
10
1ms
10ms
T c =25 o C
Single Pulse
100ms
0.2
0.1
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
t
T
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
0.01
1
1
10
V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4/6
AP70L02GS/P
16
f=1.0MHz
10000
I D =33A
14
VGS , Gate to Source Voltage (V)
V DS =20V
12
C (pF)
10
8
1000
Ciss
Coss
6
4
Crss
2
100
0
0
5
10
15
20
25
30
35
40
45
1
50
6
11
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
26
31
10
2
VGS(th) (V)
3
IS(A)
21
Fig 10. Typical Capacitance Characteristics
100
T j =150 o C
16
V DS (V)
T j =25 o C
1
1
0.1
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
T j , Junction Temperature(
o
150
C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5/6
AP70L02GS/P
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.6 x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
5V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6/6
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
SYMBOLS
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
D
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
E
9.70
10.10
10.50
e
2.04
2.54
3.04
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
b1
L2
L3
b
e
L4
Millimeters
A
A2
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c θ
c1
A1
Part Marking Information & Packing : TO-263
Part Number
Package Code
XXXXXS
70L02GS
meet Rohs requirement
YWWSSS
LOGO
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
φ
L2
L5
c1
D
L4
b1
L3
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
L1
L
c
b
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
φ
3.50
3.60
3.70
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
70L02GP
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence