A-POWER AP9918J

AP9918H/J
Advanced Power
Electronics Corp.
▼ Low on-resistance
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Capable of 2.5V gate drive
▼ Low drive current
BVDSS
20V
RDS(ON)
14mΩ
ID
45A
G
▼ Surface mount package
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D S
TO-252(H)
G
D
TO-251(J)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
± 12
V
[email protected]=25℃
Continuous Drain Current, VGS @ 4.5V
45
A
[email protected]=125℃
Continuous Drain Current, VGS @ 4.5V
20
A
1
IDM
Pulsed Drain Current
140
A
[email protected]=25℃
Total Power Dissipation
48
W
Linear Derating Factor
0.38
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.6
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200227032
AP9918H/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=18A
-
-
14
mΩ
VGS=2.5V, ID=9A
-
-
28
mΩ
0.5
-
1.2
V
VDS=10V, ID=18A
-
26
-
S
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 12V
-
-
±100
nA
ID=18A
-
19
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
10.5
-
nC
VDS=10V
-
7.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
18
-
ns
tf
Fall Time
RD=0.56Ω
-
23
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
-
pF
Coss
Output Capacitance
VDS=20V
-
310
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
125
-
pF
Min.
Typ.
-
-
45
A
-
-
140
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
1
Tj=25℃, IS=45A, VGS=0V
Max. Units
AP9918H/J
120
80
V G =4.5V
o
T C =25 C
T C =150 o C
V G =4.5V
V G =4.0V
V G =3.5V
60
ID , Drain Current (A)
ID , Drain Current (A)
V G =4.0V
80
V G =3.5V
V G =3.0V
40
V G =2.5V
V G =3.0V
40
V G =2.5V
20
0
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
26
I D = 18 A
24
I D =18A
o
1.6
T C =25 C
V G =4.5V
Normalized R DS(ON)
22
RDS(ON) (mΩ )
20
18
16
1.4
1.2
1.0
14
0.8
12
10
0.6
1
2
3
4
5
6
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP9918H/J
50
60
50
40
30
PD (W)
ID , Drain Current (A)
40
30
20
20
10
10
0
0
25
50
75
100
125
0
150
50
100
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
1000
Normalized Thermal Response (R thjc)
DUTY=0.5
100
ID (A)
10us
100us
10
1ms
10ms
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
PDM
SINGLE PULSE
t
0.01
T
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
100ms
1
0.01
1
10
V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP9918H/J
12
f=1.0MHz
10000
I D =18A
V DS =10V
VGS , Gate to Source Voltage (V)
10
V DS =15V
V DS =20V
8
1000
C (pF)
Ciss
6
4
Coss
100
Crss
2
0
10
0
5
10
15
20
25
30
35
1
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.6
100
1.4
10
1.2
T j =150 o C
VGS(th) (V)
IF (A)
T j =25 o C
1
1
0.8
0.6
0.1
0.4
0.01
0.2
0
0.4
0.8
1.2
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9918H/J
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
+
10%
VGS
S
5v
VGS
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
D
5V
RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q