A-POWER AP9922EO

AP9922EO
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
G2
S2
D2
▼ Capable of 2.5V gate drive
▼ Optimal DC/DC battery application
S2
S1
TSSOP-8
G1
S1
BVDSS
20V
RDS(ON)
15mΩ
ID
D1
6.8A
Description
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
3
[email protected]=25℃
Drain Current , VGS @ 4.5V
6.8
A
[email protected]=70℃
3
5.4
A
25
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
125
℃/W
200615052
AP9922EO
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.05
-
V/℃
VGS=4.5V, ID=6A
-
-
15
mΩ
VGS=2.5V, ID=4A
-
-
20
mΩ
VDS=VGS, ID=1mA
0.5
-
1.2
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=4.5V, ID=6A
-
22
-
S
o
VDS=20V, VGS=0V
-
-
10
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±12V
-
-
±10
uA
ID=6A
-
25
40
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
11
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=4.5V
-
47
-
ns
tf
Fall Time
RD=15Ω
-
23
-
ns
Ciss
Input Capacitance
VGS=0V
-
1730 2770
pF
Coss
Output Capacitance
VDS=20V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
240
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.2
-
Ω
Min.
Typ.
IS=0.84A,VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2
3.Surface mounted on 1 in copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
AP9922EO
50
50
5.0V
4.5V
3.5V
2.5V
ID , Drain Current (A)
40
40
30
V G =1.8V
20
10
30
V G =1.8V
20
10
0
0
0
1
1
2
2
0
3
1
V DS , Drain-to-Source Voltage (V)
1
2
2
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
35
ID=4A
T A =25 ℃
ID=6A
V G = 4.5 V
1.4
Normalized R DS(ON)
30
RDS(ON) (m Ω)
5.0V
4.5V
3.5V
2.5V
o
T A = 150 C
ID , Drain Current (A)
T A =25 o C
25
20
1.2
1.0
0.8
15
0.6
10
0
2
4
6
8
10
-50
12
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
6
5
Normalized VGS(th) (V)
1.5
IS(A)
4
3
T j =150 o C
2
T j =25 o C
1.0
0.5
1
0
0.0
0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9922EO
f=1.0MHz
10000
12
VGS , Gate to Source Voltage (V)
ID=6A
V DS = 10 V
V DS = 12 V
V DS = 16 V
C iss
C (pF)
9
1000
6
C oss
3
C rss
100
0
0
10
20
30
40
50
1
60
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
1ms
10
ID (A)
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208℃/W
0.001
0.0001
0.01
0.1
1
10
0.0010
0.0100
100
Fig 9. Maximum Safe Operating Area
0.1000
1.0000
10.0000
100.0000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q