A-POWER AP9928GEO

AP9928GEO
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
G2
S2
▼ Capable of 2.5V gate drive
D2
▼ Optimal DC/DC battery application
S2
S1
TSSOP-8
G1
S1
BVDSS
20V
RDS(ON)
23mΩ
ID
D1
5A
Description
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
3
[email protected]=25℃
Drain Current , VGS @ 4.5V
5
A
[email protected]=70℃
3
3.5
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
25
A
[email protected]=25℃
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
125
℃/W
200206031
AP9928GEO
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.02
-
V/℃
VGS=4.5V, ID=5A
-
-
23
mΩ
VGS=2.5V, ID=2A
-
-
29
mΩ
0.5
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=250uA
VDS=10V, ID=5A
-
21
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±10
uA
ID=5A
-
15.9
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.4
-
nC
VDS=10V
-
6.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=4.5V
-
30
-
ns
tf
Fall Time
RD=10Ω
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
530
-
pF
Coss
Output Capacitance
VDS=20V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
125
-
pF
Min.
Typ.
VD=VG=0V,VS=1.2V
-
-
0.83
A
Tj=25℃,IS=5A,VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
Max. Units
AP9928GEO
40
35
4.5V
3.5V
3.0V
2.5V
30
T A =150 C
30
ID , Drain Current (A)
ID , Drain Current (A)
o
T A =25 o C
35
25
20
15
4.5V
3.5V
3.0V
2.5V
25
20
15
10
V G =2.0V
10
V G =2.0V
5
5
0
0
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.9
95
I D = 5A
I D = 5A
V G = 4.5V
o
T A =25 C
Normalized R DS(ON)
1.5
RDS(ON) (mΩ )
65
35
1.1
0.7
0.3
5
1
2
3
4
-50
5
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
10
1.6
1.2
VGS(th) (V)
1
IS (A)
o
T j =150 C
0.8
0.1
0.4
0
0.01
0.2
0.5
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.1
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9928GEO
f=1.0MHz
8
1000
C iss
V DS =10V
V DS =15V
V DS =20V
6
C oss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 5A
4
C rss
100
2
0
10
0
5
10
15
20
25
1
7
Q G , Total Gate Charge (nC)
13
19
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor = 0.5
100us
10
ID (A)
1ms
10ms
1
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q