A-POWER AP9T15GH

AP9T15GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
G
▼ RoHS Compliant
BVDSS
20V
RDS(ON)
50mΩ
ID
12.5A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
G
D
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±16
V
[email protected]=25℃
Continuous Drain Current, V GS @ 4.5V
12.5
A
[email protected]=100℃
Continuous Drain Current, V GS @ 4.5V
8
A
60
A
12.5
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
0.1
W/℃
TSTG
Linear Derating Factor
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
10
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200908052-1/4
AP9T15GH/J
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
-
-
50
mΩ
VGS=2.5V, ID=5.2A
-
-
80
mΩ
VDS=VGS, ID=250uA
0.5
-
1.5
V
VDS=5V, ID=10A
-
10
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±16V
-
-
±100
nA
ID=10A
-
5
8
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=10A
-
55
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
10
-
ns
tf
Fall Time
RD=1Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
360
580
pF
Coss
Output Capacitance
VDS=20V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.67
-
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=10A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T15GH/J
40
50
o
T C = 150 o C
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
5.0V
4.5V
40
30
3.5V
20
2.5V
30
5.0V
4.5V
20
3.5V
10
2.5V
10
V G =1.5V
V G =1.5V
0
0
0
1
2
3
4
5
0
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
45
I D = 5.2 A
43
I D =6A
V G =4.5V
1.6
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
41
39
37
1.4
1.2
1.0
0.8
35
0.6
33
0
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
Normalized VGS(th) (V)
8
6
IS(A)
T j =150 o C
T j =25 o C
4
1.5
1.0
0.5
2
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9T15GH/J
f=1.0MHz
14
1000
I D =10A
C iss
V DS =10V
V DS =12V
V DS =16V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
4
2
0
10
0
2
4
6
8
10
1
12
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
100us
ID (A)
10
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4