2N5943 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 1.0 W @ TA = 25 C O 3.5 W @ TC = 25 C O O O O O TJ -65 C to +200 C TSTG -65 C to +200 C θJC 125 C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR O CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICEO ICBO hFE VCE(SAT) VBE(SAT) TEST CONDITIONS IC = 5.0 mA IC = 100 µA IE = 100 µA VCE = 20 V VCB = 15 V VCE = 15 V IC = 100 mA IC = 100 mA VCE = 15 V ft Ccb Ceb hfe rb'Cc NF Gpe IM XM NONE O TC = 25 C VCB = 30 V VCB = 0.5 V VCE = 15 V VCE = 15 V VCE = 15 V VCC = 15 V VCC = 15 V VCC = 15 V MINIMUM TYPICAL MAXIMUM UNITS 50 10 300 0.2 1.0 V V V µA µA --V V 2400 MHz 3.5 15 350 20 8.0 pF pF --pS dB dB dB dB 30 40 3.5 IC = 50 mA IB = 10 mA IB = 10 mA IC = 25 mA IC = 50 mA IC = 100 mA f = 200 MHz f = 200 MHz f = 200 MHz f = 100 KHz f = 100 KHz IC = 50 mA f = 1.0 KHz IC = 50 mA f = 31.8 MHz IC = 50 mA f = 200 MHz IC = 50 mA f = 200 MHz IC = 50 mA Vout = +50 dbmV IC = 50 mA Vout = +50 dbmV 25 1000 120 1000 1.0 25 2.0 7.0 -50 -45 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.