ALN64535 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: PACKAGE STYLE SS35 • NF = 1.6 dB Typical @ 2 GHz • S21 2 = 11 dB Typical @ 2 GHz • Hermetic Ceramic Package MAXIMUM RATINGS IC 60 mA VCBO 25 V VCEO 12 V VEBO 1.5 V PDISS 300 mW @ TA ≤ 75 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 85 C/W O O O O O O CHARACTERISTICS 1 = Base 2 & 4 = Emitter 3 = Collector O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 8 V 100 nA IEBO VEB = 1.0 V 1.0 µA hFE VCE = 8.0 V 250 --- CCB VCB = 10 V 0.6 pF ft IC = 7.0 mA 50 VCE = 10 V IC = 20 mA f = 1.0 GHz 8.0 8.5 GHz S21 VCE = 8 V IC = 20 mA f = 2.0 GHz 10 11 dB NF GA VCE = 8 V IC = 10 mA f = 2.0 GHz 10 1.6 11 2 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.5 dB REV. A 1/1