AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG (B) A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 • Internal Input/Output Matching Networks • PG = 6.0 dB at 1000W/1090 MHz • Omnigold™ Metalization System 4X.060 R F .050 NOM. .210 G H I J K L MAXIMUM RATINGS MAXIMUM DIM MINIMUM inches / mm inches / mm A .373 / 9.47 .385 / 9.78 IC 65 A VCES 55 V B C .120 / 3.25 .130 / 3.30 3.5 V D .411 / 10.44 .421 / 10.69 E .825 / 20.96 .865 / 21.97 F .525 / 13.34 .535 / 13.59 VEBO PDISS TJ 2900 W @ TC 25 °C -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 0.06 °C/W .205 / 5.21 G 1.255 / 31.88 1.265 / 32.18 H 1.675 / 42.55 1.685 / 42.80 I .002 / 0.05 .006 / 0.15 J .095 / 2.41 .105 / 2.67 K .115 / 2.92 .135 / 3.43 .445 / 11.30 .457 / 11.61 .250 / 6.35 L M 1 = Collector 2 = Base 3 = Emitter CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 100 mA 65 V BVEBO IE = 50 mA 3.5 V hFE VCE = 5.0 V 10 --- POUT PIN PG ηC tr 1 VSRW IC = 1.0 A 1000 F = 1090 MHz VCC = 45 V PW = 10 µsec DF = 1 % 250 6.0 43 F = 1030 MHz 70 9:1 W W dB % ns Note 1: At rated output power and pulse conditions. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1