C3-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The C3-28 is Designed for Class A, B and C Power Amplifier Applications Up to 500 MHz. A 45° C E E B FEATURES: B • PG = 13 dB Typ. at 3.0 W/400 MHz • Emitter Ballasting for Ruggedness • Omnigold™ Metallization System C D J E I F G H K MAXIMUM RATINGS IC 1.0 A VCB 45 V O PDISS 12 W @ TC = 25 C TJ -65 to +200 OC DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .245 / 6.22 H O θ JC 15 C/W CHARACTERISTICS SYMBOL IC = 5 mA BV CER IC = 20 mA BV EBO IE = 5 mA .255 / 6.48 .640 / 16.26 J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10810 NONE TC = 25 OC TEST CONDITIONS BV CBO .137 / 3.48 .130 / 3.30 G -65 to +150 OC MAXIMUM .572 / 14.53 F I T STG #8-32 UNC MINIMUM TYPICAL MAXIMUM RBE = 10 Ω 45 V 45 V 3.5 V ICBO VCE = 28 V hFE VCE = 5.0 V IC = 100 mA 15 Ft VCE = 20 V IC = 100 mA 600 Cob VCB = 28 V PG ηC VCE = 28 V f = 400 MHz 500 µA 150 --MHz f = 1.0 MHz POUT = 3.0 W UNITS 7.0 12 50 13 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF dB % REV. A 1/1