MSC1090M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG(B) A .100 X 45° The ASI MSC1090M is a common base Class C transistor, designed for Avionics, DME Applications from 1025 to 1150 MHz. ØD 1 3 C B .088 x 45° CHAMFER 4 2 E F FEATURES: G H • Internal Input Matching Network • PG = 8.4 dB at 90 W/1150 MHz • Omnigold™ Metalization System I MAXIMUM RATINGS 250 mA IC J DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 C .245 / 6.22 D .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 F .790 / 20.07 .810 / 20.57 .003 / 0.08 .007 / 0.18 MAXIMUM .255 / 6.48 .285 / 7.24 G VCC 50 V H I .052 / 1.32 .072 / 1.83 PDISS 290 W @ TC = 25 °C J .120 / 3.05 .130 / 3.30 TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.60 °C/W CHARACTERISTICS SYMBOL K .210 / 5.33 K 1 = COLLECTOR 2 = EMITTER 3 & 4 = BASE TC = 25 °C NONETEST CONDITIONS BVCBO IC = 1 mA BVCER IC = 5 mA BVEBO IE = 1 mA ICES VCE = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V PIN = 13 W RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 6.3 IC = 100 mA POUT = 90 W f = 1025 - 1150 MHz UNITS mA 5 --- 8.4 35 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1