MSC80914 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MSC80914 is Designed for Class C, Common Base General Purpose Applications to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES INCLUDE: G • Gold Metalization • Site Emitter Ballasting L 200 mA VCC 35 V PDISS 7.0 W @ TC = 25 C O -55 C to +200 C θJC O O -55 C to +200 C O 20 C/W CHARACTERISTICS SYMBOL inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 1.0 mA ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 28 V Pout PG ηC VCC = 28 V .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 O TC = 25 C TEST CONDITIONS BVCBO MAXIMUM inches / mm G O NP MINIMUM E O TSTG I K DIM F TJ J M MAXIMUM RATINGS IC F H MINIMUM TYPICAL MAXIMUM RBE = 10 Ω IC = 100 mA 45 V 45 V 3.5 V 15 f = 1.0 MHz Pin = 200 mW fo = 2.0 GHz UNITS 3.0 1.0 7.0 35 1.25 8.0 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 150 --- 3.5 pF W dB % REV. A 1/1