PT9702B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9702B is a Common Emitter Device Designed for Class AB and C Amplifier Applications in the 220 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 2.0 A VCES 60 V VCEO 30 V PDISS 40 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -55 °C to +200 °C θJC 4.0 C/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER O CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 20 mA 30 V BVCES IC = 20 mA 60 V BVEBO IE = 2.0 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηC VCE = 28 V IC = 100 mA 10 f = 1.0 MHz Pout = 20 W f = 400 MHz 7.0 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.0 mA 150 --- 24 pF dB % REV. A 1/1