SD1169 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1169 is a Common Emitter Device Designed for Class C Amplifier Applications in HF Land Mobile Radios. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Aluminum Metalization • Emitter Ballasting MAXIMUM RATINGS IC 6A VCB 36 V PDISS 80 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +150 OC θ JC 2.2 OC/W CHARACTERISTICS 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 100mA 18 V BV CEO IC = 50mA 36 V BV EBO IE = 10mA 4.0 V ICBO VCB = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V GPE ηC VCE = 12.5 V 5 IC = 1.0 A 5 --- f = 1.0 MHz POUT = 40 W f = 88 MHz 200 6.0 mA 7.5 65 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.