SD1490-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490-1 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching PACKAGE STYLE .450 BAL FLG.(A) MAXIMUM RATINGS IC 8.0 A VCB 45 V PDISS 155 W @ TC = 25 C TJ -55 C to +200 C TSTG -55 C to +200 C θJC 1.15 C/W O O O O O O CHARACTERISTICS SYMBOL 1 = Collector 2 = Base 3 = Emitter O TC = 25 C TEST CONDITIONS (PER SIDE) MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 30 V BVCBO IC = 50 mA 45 V BVEBO IE = 10 mA 3.0 V hFE VCE = 5.0 V COB VCB = 28 V GP VCE = 26.5 V IC = 2 X 1.6 A f = 860 MHz Gp VCE = 28 V Pout = 50 W IC = 2 X 250 mA f = 860 MHz IMD3 IC = 3.0 A f = 1.0 MHz VCE = 26.5 V Pout = 25 W SOUND = -10 dB = -8.0dB VISION 10 100 --- 72 pF 8.0 9.0 dB 7.0 8.0 dB f = 860 MHz = -16dB -45 dBc CHROMA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1