THX15C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI THX15C is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 10 A VCB 110 V PDISS 233 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 0.75 °C/W CHARACTERISTICS 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE TC = 25 °C SYMBOL TEST CONDITIONS BVCEO IC = 100 mA BVCES IC = 100 mA BVCBO MINIMUM TYPICAL MAXIMUM UNITS 55 V 110 V IC = 100 mA 110 V BVEBO IE = 10 mA 4.0 V ICES VCE = 60 V ICEO VCE = 30 V hFE VCE = 6.0 V Cob VCB = 50 V Pg IMD3 ηC VCE = 50 V f = 30 MHz VBE = 0 V VBE = 0 V IC = 1.4 A 22.5 f = 1.0 MHz Icq = 100 mA Pout =150 W (PEP) 5.0 mA 5.0 mA 27.0 --- 220 pF -30 dB dBc % 14 37 -37 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1