TPM401 NPN RF POWER TRANSISTOR DESCRIPTION: The TPM401 is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS IC 400 mA VCBO 40 V PDISS 8.75 W @ TC = 25 OC TJ -55 OC to+200 OC T STG -55 OC to+200 OC θ JC 20 OC/W CHARACTERISTICS 1 = Collector 2 = Base 3 & 4 = Emitter TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 1.0 mA 40 V BV CEO IC = 1.0 mA 28 V BV EBO IE = 1.0 mA 3.5 V hFE VCE = 5.0 V COB VCB = 28 PG P1dB VCE = 24 V IC = 100 mA 20 f = 1.0 MHz IC = 200 mA f = 400 MHz 13 120 --- 5.0 pF 15 dB 2.0 W POUT = 1.0 W VCE = 24 V IC = 200 mA f = 400 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.