28M0 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION 60V 300mA MONOLITHIC DIODE ARRAY FEATURES: • • • • TWO EIGHT DIODE CORE DRIVER trr < 20 ns .061" RUGGED AIR-ISOLATED CONSTRUCTION J LOW REVERSE LEAKAGE CURRENT J J J Absolute Maximum Ratings: A Symbol Parameter Limit VBR(R) *1 *2 Reverse Breakdown Voltage IO *1 Continuous Forward Current IFSM *1 Peak Surge Current (tp= 1/120 s) Top Operating Junction Temperature Range Tstg Storage Temperature Range NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% 60 300 500 -65 to +150 -65 to +200 C C A .054" Unit Vdc mAdc mAdc °C °C J J J J Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified Symbol Parameter Conditions Min BV1 Breakdown Voltage IR = 10uAdc Vf1 Forward Voltage IF = 100mAdc *1 Vf2 Forward Voltage IF = 500mAdc *1 IR1 Reverse Current VR = 40 Vdc Ct Capacitance (pin to pin) VR = 0 Vdc ; f = 1 MHz tfr Forward Recovery Time IF = 500mAdc trr Reverse Recovery Time IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge Packaging Options: W: Wafer (100% probed) U: Wafer (sample probed) D: Chip (Waffle Pack) B: Chip (Vial) V: Chip (Waffle Pack, 100% visually inspected) X: Other Unit 1 1.5 0.1 8.0 40 20 Vdc Vdc uAdc pF ns ns 60 Processing Options: Standard: Capable of JANTXV application (No Suffix) Suffix C: Commercial Suffix S: Capable of S-Level equivalent applications ORDERING INFORMATION PART #: 28M0_ _- _ Metallization Options: Standard: Al Top Max / Au Backside (No Dash #) First Suffix Letter: Packaging Option Second Suffix Letter: Processing Option Dash #: Metallization Option Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice. MSC1025.PDF Rev - 12/3/98