SDV251S Semiconductor Variable Capacitance Diode Features • High capacitance ratio in low voltage • Low series resistance (rS=0.6Ω Max.) Application • AFC, VCO application Ordering Information Type No. Marking Package Code V7 SOT-23 SDV251S Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1 1.90 Typ. 1 0.4 Typ. 2 3 0.45~0.60 1 2 -0.03 +0.05 0.124 0~0.1 0.38 1.12 Max. 0.2 Min. KSD-2094-001 PIN Connections 1. Anode 2. NC 3. Cathode 1 SDV251S Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Reverse voltage VR 12 V Junction temperature Tj 150 °C Storage temperature Tstg -55 ~ 150 °C Electrical Characteristics Characteristic Ta=25°C Symbol Test Condition Reverse Voltage VR IR=10 ㎂ Reverse Current IR VR=9V Diode Capacitance Min. Typ. Max. Unit 12 - - V - - 200 ㎁ C1.6V VR=1.6V, f=1MHz 23 - 38 C5.0V VR=5V, f=1MHz 11 - 19 C1.6V / C5.0V 1.7 2.0 2.2 - - - 0.6 Ω Capacitance Ratio n Series resistance rS VR=1V, f=50MHz KSD-2094-001 ㎊ 2 SDV251S ℃ KSD-2094-001 ℃ 3