STA733 Semiconductor PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with STC945 Ordering Information Type NO. Marking STA733 Package Code STA733 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. 2 3 PIN Connections 1. Emitter 2. Collector 3. Basev 0.38 1.20±0.1 1 KST-9074-000 1 STA733 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector current IC -150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -50 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -40 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-50V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 µA DC current gain hFE* VCE=-6V, IC=-2mA 70 - 700 - - - -0.3 V 80 - - MHz Collector-Emitter saturation voltage Transition frequency VCE(sat) fT IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF Noise figure NF VCE=-6V, IC=-0.1mA f=1KHz, Rg=10KΩ - - 10 dB *: hFE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700. KST-9074-000 2 STA733 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VBE Fig. 3 IC-VCE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC KST-9074-000 3