STK7002B Semiconductor N-Channel Enhancement-Mode MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=60V(Min.) Low Crss : Crss=3.1pF(Typ.) Low gate charge : Qg=2.8nC(Typ.) Low RDS(on) :RDS(on)=2.8Ω(Typ.) Ordering Information Type NO. STK7002B Marking Package Code 72B SOT-23 Outline Dimensions unit : mm 1 3 2 PIN Connections 1. Gate 2. Source 3. Drain KSD-T5C042-000 1 STK7002B Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V (Tc=25℃) 380 mA (Tc=100℃) 240 mA IDP 1.52 A PD 350 mW Drain current (DC) ID Drain current (Pulsed) * Drain Power dissipation ** Avalanche current (Single) ② IAS 380 mA Single pulsed avalanche energy ② EAS 3.8 mJ Avalanche current (Repetitive) ① IAR 380 mA Repetitive avalanche energy ① EAR 0.1 mJ TJ Tstg 150 -55~150 °C Junction temperature Storage temperature range * Limited by maximum junction temperature ** Device mounted on 99.5% Alumina 10 x 8 x 0.6mm Characteristic Thermal resistance Junction-ambient Symbol Typ. Max Unit Rth(J-a) - 357 ℃/W KSD-T5C042-000 2 STK7002B Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=10μA, VGS=0 60 - - V Gate-threshold voltage VGS(th) ID=250μA, VDS= VGS 1.0 - 2.5 V Drain-source leakage current IDSS VDS=60V, VGS=0V - - 1 μA Gate-source leakage IGSS VDS=0V, VGS=±20V - - ±100 nA RDS(ON) VGS=5V, ID=50mA - 2.8 4.2 RDS(ON) VGS=10V, ID=180mA 2.7 4.0 Drain-Source on-resistance ④ Forward transfer admittance ④ gfs VDS=3V, ID=180mA Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Turn-off delay time td(off) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=30V, VGS=10V ID=380mA, RG=25Ω - 353 - 20 30 - 7.8 11.7 - 3.1 4.7 - 7 10.5 - 11 16.5 - 2.8 4.2 - 0.4 0.6 - 0.2 0.3 mS ③④ VDD=30V, VGS=10V ID=380mA ③④ Symbol Continuous source current IS Test Condition pF ns Source-Drain Diode Ratings and Characteristics Characteristic Ω nC (Ta=25°C) Min Typ Max - - 380 - - 1520 Unit Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=0.38A - - 1.4 V Is=380mA, VGS=0V dIs/dt=10A/us - 39 - ns - 10 - uC Reverse recovery time trr Reverse recovery charge Qrr mA Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=10mH, IAS=0.38A, VDD=20V, RG=25Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T5C042-000 3 STK7002B Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ = KSD-T5C042-000 4 STK7002B Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ ㅋ C Fig. 9 C Fig. 10 Safe Operating Area ID - TC ` * KSD-T5C042-000 5 STK7002B Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T5C042-000 6 STK7002B Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T5C042-000 7 STK7002B The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T5C042-000 8