STS9018 Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB(Max.) at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information Type NO. Marking STS9018 STS9018 Package Code TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 14.0±0.40 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9019-000 1 STS9018 Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 4 V Collector current IC 20 mA Emitter current IE -20 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range Ta=25°°C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=40V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 - - 0.1 µA DC current gain hFE* VCE=5V, IC=1mA 54 - 198 - 500 800 - MHz - - 4 15 - - Transistor frequency fT Noise figure NF Power gain GPE VCE=10V, IE=-8mA VCB=6V,IE=-1mA, f=100MHz dB * : hFE rank / F : 54~80, G : 70~108, H : 97~146, I : 132~198. KST-9019-000 2 STS9018 Electrical Characteristic Curves Fig. 1 PC –Ta Fig. 3 hFE-IC Fig. 5 Cob-VCB, Cib-VEB Fig. 2 IC-VCE Fig. 4 fT-IE Fig. 6 Yie-IC KST-9019-000 3 STS9018 Electrical Characteristic Curves Fig. 7 IC-Yoe Fig. 8 IC-Yfe Fig. 9 IC - Yre KST-9019-000 4