TBN4227 Series Semiconductor Si NPN Transistor Unit in mm SOT-323 □ Applications 2.1±0.1 1.25±0.05 - VHF and UHF low noise amplifier 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - Wide band amplifier 2 - High gain bandwidth product 0.15±0.05 fT = 8 GHz at VCE = 3 V, IC = 7 mA fT = 9 GHz at VCE = 3 V, IC = 20 mA 0.90±0.1 |S21|2 = 11.4 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz 0~0.1 - High power gain 0.1 Min. Pin Configuration 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Ratings Unit Collector to Base Voltage BVCBO 20 V Collector to Emitter Voltage BVCEO 8 V Emitter to Base Voltage BVEBO 3 V Collector Current IC 65 mA Total Power Dissipation Ptot 150 mW Operating Junction Temperature Tj 150 ℃ Tstg -65 ~ 150 ℃ Parameter Storage Temperature Caution : Electro Static Discharge sensitive device 1 TBN4227 Series □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB = 15 V, IE = 0 mA - - 0.5 ㎂ Emitter Cut-off Current IEBO VEB = 2 V, IC = 0 mA - - 0.5 ㎂ DC Current Gain hFE VCE = 3 V, IC = 7 mA 70 100 250 fT VCE = 3 V, IC = 7 mA 5.0 8.0 - GHz |S21|2 VCE = 3 V, IC = 7 mA, f = 1 GHz 9.0 11.4 - dB Noise Figure NF VCE = 3 V, IC = 3 mA, f = 1 GHz - 1.2 2.0 dB Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz - 0.62 0.9 pF Gain Bandwidth Product Insertion Power Gain □ hFE Classification Marking SL2 SL1 hFE Value 70 - 140 125 - 250 □ Available Package Product Package Unit in mm Dimension TBN4227S SOT-23 2.9 ⅹ 1.3, 1.2t TBN4227U SOT-323 2.0 ⅹ 1.25, 1.0t TBN4227E SOT-523 1.6 ⅹ 0.8, 0.8t TBN4227KF SOT-623F 1.4 ⅹ 0.8, 0.6t 2 TBN4227 Series □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Reverse Transfer Capacitance vs. Collector to Base Voltage Total Power Dissipation vs. Ambient Temperature 1.0 Reverse Transfer Capacitance, Cre (pF) Total Power Dissipation, Ptot (mW) 250 Free Air 200 150 100 50 0 0 25 50 75 100 125 0.8 0.7 0.6 0.5 0.4 150 f = 1 MHz 0.9 o 0 2 4 6 8 10 Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current Collector Current vs. Base to Emitter Voltage 300 12 30 VCE = 3 V VCE = 3 V Collector Current, IC (mA) DC Current Gain, hFE 25 100 50 10 0.5 1 10 Collector Current, IC (mA) 50 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) 3 TBN4227 Series Gain Bandwidth Product vs. Collector Current Collector Current vs. Collector to Emitter Voltage 14 Gain Bandwidth Product, fT (GHz) Collector Current, IC (mA) 25 20 120 µA 15 100 µA 80 µA 10 60 µA 40 µA 5 0 IB = 20 µA 0 1 2 3 4 10 8 6 4 2 0 5 VCE = 3 V f = 1 GHz 12 1 10 Insertion Power Gain vs. Collector Current Insertion Power Gain vs. Frequency 16 2 Insertion Power Gian, |S21| (dB) VCE = 3 V IC = 7 mA 25 2 Insertion Power Gain, |S21| (dB) 30 20 15 10 5 0 0.1 50 Collector Current, IC (mA) Collector to Emitter Voltage, VCE (V) 1 Frequency (GHz) 10 VCE = 3 V f = 1 GHz 14 12 10 8 6 4 2 0 1 10 50 Collector Current, IC (mA) 4 TBN4227 Series Noise Figure vs. Collector Current Maximum Available Gain vs. Collector Current 5 VCE = 3 V f = 1GHz 18 VCE = 3 V f = 1 GHz 4 16 14 Noise Figure, NF (dB) Maximum Available Gain, MAG (dB) 20 12 10 8 6 4 3 2 1 2 0 1 10 0 0.5 50 1 10 50 Collector Current, IC (mA) Collector Current, IC (mA) Noise Parameter vs. Frequency (at VCE = 3 V, IC = 3 mA) Frequency (GHz) Fmin (dB) rn 0.9 1 1.5 1.8 1.193 1.147 1.302 1.636 0.383 0.376 0.327 0.313 Γopt Mag 0.5427 0.5287 0.4514 0.353 Phase 37.04 40.24 56.36 67.11 Association gain (dB) 10.477 9.799 7.374 6.607 Gmax (dB) 13.809 13.274 9.887 8.27 5 TBN4227 Series □ Dimensions of TBN4227S in mm SOT-23 □ Dimensions of TBN4227E in mm SOT-523 □ Dimensions of TBN4227KF in mm Pin Configuration (SOT-23, SOT-523, SOT-623F) SOT-623F 1.2 0.8 0.9 Symbol Description 1 B Base 2 E Emitter 3 C Collector 3 0.2 2 0.11 0~0.1 0.6 1.4 1 Pin No. 6