AVAGO ASDL-4262

ASDL-4262
High Power T-1¾ (5mm) AlGaAs/GaAs Infrared (940nm) Lamp
Data Sheet
Description
Features
ASDL-4262 is a high power Infrared emitter that utilizes
AlGaAs on GaAs LED technology. It is optimized for
high efficiency at emission wavelength of 940nm and
is designed for application that requires high radiant
intensity, low forward voltage at wide viewing angle. The
emitter is encapsulated in T-1¾ (5mm) package and is
suitable for high performance replacements of standard
emitters.
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T-1¾ Package
940nm wavelength
Wide Viewing Angle
High Power
Pulse Operating
Low Forward Voltage
Ideal for high current and low forward voltage
application
• Lead Free & ROHS Compliant
• Available in Tape & Reel
Applications
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IR Remote Control for Consumer Devices
IR Remote Control for Industrial Equipment
Photo-interrupters
Infrared Illuminator Security Camera
Reflective Applications
Ordering Information
Part Number
Lead Form
Color
Packaging
Shipping Option
ASDL-4262-C22
ASDL-4262-C31
Straight
Clear
Tape & Reel
Bulk
4000pcs
8000pcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protuded resin under flange is 1.5mm (.059”) max
4. Lead spacing is measured where leads emerge from package
5. Specifications are subject to change without notice
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Max
Unit
Reference
Peak Forward Current
IFPK
Min.
2
A
300pps
DC Forward Current
IFDC
100
mA
Power Dissipation
PDISS
150
mW
Reverse Voltage
VR
5
V
Operating Temperature
TO
-40
85
°C
Storage Temperature
TS
-55
100
°C
LED Junction Temperature
TJ
110
°C
320 °C for 3 sec
Lead Soldering Temperature
[4.0mm (0.157”) From Body]
Electrical Characteristics at 25°C
Parameter
Symbol
Forward Voltage
VF
Reverse Voltage
VR
Thermal Resistance,
Junction to Ambient
RqJA
Min.
Typ.
Max.
Unit
Condition
1.25
1.6
V
IFDC=50mA
V
IR=100uA
5
°C/W
350
Optical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Radiant On-Axis Intensity
IE
30
Viewing Angle
2θ1/2
Peak wavelength
Max.
Unit
Condition
-
mW/Sr
IFDC=100mA
50
deg
λPK
940
nm
IFDC = 20mA
Spectral Width
Δλ
50
nm
IFDC = 20mA
Optical Rise Time
tr/tf
1
us
IFPK=100mA
Duty Factor=50%
Pulse Width=10us
Optical Fall Time
tf
1
us
IFPK=100mA
Duty Factor=50%
Pulse Width=10us
Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated)
120
Forward Current IF (mA)
Relative Radiant Intensity
1.0
0.5
0
840
940
100
80
60
40
20
0
1040
-40 -20 0
Wavelength (nm)
Figure 1. SPECTRAL DISTRIBUTION
Figure 2. FORWARD CURRENT VS. AMBIENT TEMPERATURE
1.2
Output Power Relative To
Value at IF=20mA
Forward Current (mA)
1000
100
10
0
1.0
1.5
2.0
2.5
1.0
0.8
0.6
0.4
0.2
0
3.0
-20
20
40
200
400
600
800 1000
For product information and a complete list of distributors, please go to our web site:
o
10
o
20
o
30
o
40
o
1.0
0.9
50
o
0.8
60
o
0.7
70
80
90
o
0.5 0.3 0.1
Foward Current (mA)
Figure 5. RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT
80
Figure 4. RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE
0
0
60
Ambient Temperature Ta ( C)
Relative Radiant Intensity
Output Power Relative To
Value at IF=20mA
Figure 3. FORWARD CURRENT VS. FORWARD VOLTAGE
0
o
Forward Voltage (V)
40
36
32
28
24
20
16
12
8
4
0
20 40 60 80 100
Ambient Temperature Ta ( o C)
Figure 6. RADIATION DIAGRAM
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Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved.
AV02-0016EN - January 22, 2007
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