ASDL-4670 High Performance T-1 (3mm) AlGaAs/GaAs Infrared (940nm) Lamp Data Sheet Description Features ASDL-4670 is a high performance Infrared emitter that utilizes AlGaAs on GaAs LED technology. It is optimized for efficiency at emission wavelength of 940nm and is designed for application that requires high radiant intensity, low forward voltage at wide viewing angle. The emitter is encapsulated in clear T-1 (3mm) package. • • • • • T-1 Package 940nm wavelength Wide Viewing Angle Low Forward Voltage Lead Free and ROHS Compliant • Available in Tape & Reel Applications • • • • • • • IR Remote Control for Consumer Device IR Remote Control for Industrial Equipment Portable Infrared Instruments Wireless Headset Infrared Illuminator Security Camera Photo-Interrupters Reflective Applications Order Information Part Number Lead Form Color Packaging Shipping Option ASDL-4670-C22 ASDL-4670-C31 Straight Clear Tape & Reel Bulk 4000pcs 8000pcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Protruded resin under flange is 1.5mm (.059”) max 4. Lead spacing is measured where leads emerge from package 5. Specifications are subject to change without notice for performance improvement Absolute Maximum Ratings at 25°C Parameter Symbol Peak Forward Current Continuous Forward Current Min. Max Unit Reference IFPK 1 A 300pps IFDC 60 mA Power Dissipation PDISS 100 mW Reverse Voltage VR 5 V Operating Temperature TO -40 85 °C Storage Temperature TS -55 100 °C LED Junction Temperature TJ 110 °C Lead Soldering Temperature 260°C for 5 sec Electrical Characteristics at 25°C Parameter Symbol Forward Voltage VF Reverse Voltage VR Thermal Resistance, Junction to Ambient Rqja Min. Typ. Max. Unit Condition 1.2 1.6 V IFDC=50mA V IR=100uA 5 °C/W 350 Optical Characteristics at 25°C Parameter Symbol Min. Typ. Max. Unit Condition Radiant On-Axis Intensity IE 2.71 - 7.67 mW/Sr IFDC=20mA Viewing Angle 2q1/2 60 deg Peak wavelength 940 nm IFDC = 20mA Spectral Width λPK Δλ 50 nm IFDC = 20mA Optical Rise Time tr 1 us IFPK=100mA Duty Factor=50% Pulse Width=10us Optical Fall Time tf 1 us IFPK=100mA Duty Factor=50% Pulse Width=10us Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) 60 Forward Current IF (mA) Relative Radiant Intensity 1.0 0.5 0 840 940 50 40 30 20 10 0 1040 -40 -20 Figure 1. SPECTRAL DISTRIBUTION Figure 2. FORWARD CURRENT VS. AMBIENT TEMPERATURE 1.2 Output Power Relative To Value at IF=20mA Forward Current (mA) 50 40 30 20 10 0 1.2 1.6 2.0 2.4 1.0 0.8 0.6 0.4 0.2 0 2.8 -20 0 40 0 Relative Radiant Intensity 4.0 3.0 2.0 1.0 20 40 60 80 80 Figure 4. RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE 5.0 0 60 Ambient Temperature Ta ( C) Figure 3. FORWARD CURRENT VS. FORWARD VOLTAGE Output Power Relative To Value at IF=20mA 20 o Forward Voltage (V) 0 20 40 60 80 100 Ambient Temperature Ta ( o C) Wavelength (nm) 0 0 100 o For product information and a complete list of distributors, please go to our web site: o 20 o 30 40 1.0 0.9 50 0.8 60 o o o o o 70 o 80 o 90 0.7 0.5 0.3 0.1 Foward Current (mA) Figure 5. RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT 10 Figure 6. RADIATION DIAGRAM www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved. AV02-0009EN - January 22, 2007 0.2 0.4 0.6