ASDL-5880 High Speed Photodiode in Top View Package Data Sheet Description Features ASDL-5880 is a Silicon PIN Photodiode encapsulated in clear Top View low profile package. It is ideal for applications from 700nm to 1100nm that require high sensitivity with low dark current and short switching time. • • • • Top View Package Short Switching Time High Sensitivity Low Dark Current • • • • Low Junction Capacitance Wide viewing Angle Lead Free & ROHS Compliant Available in Tape & Reel Applications • IR Remote Control for Consumer Device • IR Remote Control for Industrial Electronics & Equipment • High Speed IR data communication Ordering Information Part Number Lead Form Color Packaging Shipping Option ASDL-5880-C22 ASDL-5880-C31 Straight Clear Tape & Reel Bulk 4000pcs 8000pcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Protuded resin under flange is 1.5mm (.059”) max 4. Lead spacing is measured where leads emerge from package 5. Active area: 49 x 49 mm2 6. Refractive index of epoxy: ή= 1.5. 7. Specifications are subject to change without notice. Absolute Maximum Ratings at TA=25°C Parameter Symbol Max Unit Power Dissipation PDISS 150 mW Reverse Voltage (Ir=100uA) VR 30 V Operating Temperature TO -40 85 °C Storage Temperature TS -55 100 °C Junction temperature TJ 110 °C Lead Soldering Temperature [ .6mm (0.063”) From Body ] Min. 260°C for 5 seconds Electrical Characteristics at 25°C Parameter Symbol Forward Voltage VF Breakdown Voltage VBR Reverse Dark Current ID Diode Capacitance CO Open Circuit Voltage VOC Thermal Resistance, Junction to Pin RqJP Min. Typ. Max. Unit Condition 1 1.3 V If = 50mA V Ir= 100uA Ee = 0mW/cm2 nA VR=10V Ee=0mW/cm2 25 pF Vr = 3V F = 1MHZ Ee = 0mW/cm2 350 mV λ = 940nm Ee=0.5mW/cm2 375 °C/W 30 30 - - Optical Characteristics at 25°C Parameter Symbol Min. Typ. Photocurrent IPH 1 Radiant Sensitive Area Unit Condition 3 uA Ee = 0.5mW/cm2 λ = 940nm Vr = 5V A 1.55 mm2 Absolute Spectral Sensitivity S 0.6 A/W Viewing Angle 2θ1/2 180 Deg Wavelength of Peak sensitivity λPK 900 nm Spectral BandWidth Δλ Rise Time tr 5 ns VR = 10V λ = 850nm RL = 1K Ω Fall Time tf 5 ns VR = 10V λ = 850nm RL = 1K Ω 700 900 Max. 1100 λ = 940nm Vr = 5V nm Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) pA pF 4000 100 80 Capacitance Ct Dark Current ID 3000 2000 1000 0 60 40 20 5 0 10 15 0 20 V -2 10 Reverse Voltage VR -1 10 10 0 1 10 2 10 V Reverse Voltage VR Figure 1. DARK CURRENT VS. REVERSE VOLTAGE TA=25°C, Ee=0 mW/cm 2 Figure 2. CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ; Ee=0mW/cm 2 nA 103 1.4 1.2 Dark Current ID o Is 25 Photocurrent Is amb 2 10 1.0 0.8 0.6 0.4 1 10 0 10 0.2 0 -1 -20 0 20 40 60 o 80 C Ambient Temperature Figure 3. PHOTOCURRENT VS. AMBIENT TEMPERATURE 10 0 20 40 60 80 o 100 C Ambient Temperature Figure 4. DARK CURRENT AMBIENT TEMPERATURE VR=10, Ee=0mW/cm 2 Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) Cont. % uA 10 2 10 1 10 0 10 -1 10 -2 80 Photocurrent Ip Relative Spectral Sensitivity 100 60 40 20 0 200 400 800 1000 1200 600 -2 -1 10 10 Wavelength o mW 2 CM 1 10 Irradiance Ee Figure 5. RELATIVE SPECTRAL SENSITIVITY VS WAVELENGTH 0 0 10 10 o 20 Figure 6. PHOTOCURRENT VS IRRADIANCE λ = 940 nm o 30 o 40 o 50 o 0.8 60 o 0.7 70 o 80 1.0 0.9 Total Power Dissipation mW Relative Sensitivity 175 o 100 0.5 0.3 125 75 25 o 0 0.2 0.4 0.6 0 -40 -20 0 o 20 40 60 80 100 C Ambient Temperature Figure 7. SENSITIVITY DIAGRAM For product information and a complete list of distributors, please go to our web site: Figure 8. TOTAL POWER DISSIPATION VS AMBIENT TEMPERATURE www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved. AV02-0020EN - January 22, 2007