HSDL - 4261 High-Power T-1¾ (5mm) AlGaAs Infrared (870nm) Lamp Data Sheet Description Features The HSDL-4261 Infrared emitter was designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 870nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package. • Very High Power AlGaAs LED Technology • 870nm Wavelength • T-1¾ Package • Low Cost • Low Forward Voltage: 1.4V at 20mA • High Speed: 15ns Rise Times Applications 5.0±0. • Industrial IR Equipments • IR Portable Instruments 8.7±0. 1.14±0. • Consumer Electronics (Optical mouse etc) • High Speed IR Communications (IR LANs, IR Modems, IR Dongles etc) • IR Audio 5.8±0. 1.6min. • IR Telephones 0.7max. .54 Part Number HSDL-4261 1.0min. CATHODE FLAT 0.50±0.1 Lead Form Shipping Option Straight Bulk Absolute Maximum Ratings at 25°C Parameter Symbol Min. Max Unit Reference DC Forward Current IFDC - 100 mA [1], Fig. 2 Power Dissipation PDISS - 190 mW Reverse Voltage VR 5 - V Operating Temperature TO -40 70 °C Storage Temperature TS -40 100 °C LED Junction Temperature TJ - 110 °C - 260 for 5 sec °C Lead Soldering Temperature Notes: 1. Derate as shown in Figure 6. Electrical Characteristics at 25°C Parameter Symbol Min. Typ. Max. Unit Condition Reference Forward Voltage VF - 1.4 1.7 1.5 1.9 V IFDC=20mA IFDC=100mA Fig. 2 Fig. 3 Forward VoltageTemperature Coefficient DV/DT - -1.5 -1.3 - mV/°C IFDC=20mA IFDC=100mA Fig. 4 Series Resistance RS - 4.1 - Ohms IFDC=100mA Diode Capacitance CO - 80 - pF 0V, 1MHz Reverse Voltage VR 3 14 - V IR=100uA Thermal Resistance, Junction to Ambient Rqja - 280 - °C/W Optical Characteristics at 25°C Parameter Symbol Min. Typ. Max. Unit Condition Reference Radiant Optical Power PO - 9 45 - mW IFDC=20mA IFDC=100mA Radiant On-Axis Intensity IE - 36 180 - mW/Sr IFDC=20mA IFDC=100mA Radiant On-Axis Intensity Temperature Coefficient DIE/DT - -0.22 - %/°C IFDC=100mA Viewing Angle 2q1/2 - 26 - deg IFDC=20mA Fig. 7 Peak wavelength lPK - 870 - nm IFDC=20mA Fig. 1 Peak wavelengthTemperature Coefficient Dl/DT - 0.18 - nm/°C IFDC=20mA Spectral Width Dl - 47 52 - nm IFDC=20mA IFDC=100mA Optical Rise and Fall Time tr/tf - 15 - ns Bandwidth fc - 23 - MHz IFPK=500mA Duty Factor=33% Pulse Width=125ns Fig. 5 Fig. 1 1. 100 PeakWavelengthat IFDC=0mA,TA=5oC 0.8 Forward Current, IFDC (mA) RelativeRadiantIntensity 1 0.6 0.4 0. 0 750 780 810 840 870 Wavelength(nm) 900 10 1 0.0 90 0. 0.4 0.6 0.8 1.0 1. Forward Voltage, VF (V) 100 ForwardVoltage,VF(V) 1.8 TA=5˚C 10 1.8 IFDC=100mA 1.6 IFDC=0mA 1.4 1. 1 0.0 0.5 1.0 1.5 .0 .5 .0 1.0 .5 -40 -5 Forward Voltage, VF (V) Figure 3. Peak Forward Current vs. Forward Voltage 0 5 50 70 AmbientTemperature(oC) DC Forward Current, IFDC (mA) 4.0 TA=5˚C .0 .0 1.0 0.0 0 40 60 80 DC Forward Current, IFDC (mA) Figure 5. Relative Radiant Intensity vs. DC Forward Current 100 RJA=00˚C/W 100 0 85 Figure 4. Forward Voltage vs. Ambient Temperature 5.0 Relative Radiant Intensity (Normalized at 20mA) 1.6 .0 1000 100 80 RJA=400˚C/W 60 RJA=500˚C/W 40 0 0 0 10 0 0 40 50 Ambient Temperature, TA (˚C) 60 Figure 6. DC Forward Current vs. Ambient Temperature Derated Based on TJMAX=1100C 1.4 Figure 2. DC Forward Current vs. Forward Voltage Figure 1. Relative Radiant Intensity vs. Wavelength Peak Forward Current, IFPK (mA) TA=5˚C 70 Figure 7. Radiant Intensity vs. Angular Displacement For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. 5989-1534EN - April 11, 2006