Si7901EDN New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile rDS(on) (W) ID (A) 0.048 @ VGS = –4.5 V –6.3 0.068 @ VGS = –2.5 V –5.3 APPLICATIONS 0.090 @ VGS = –1.8 V –4.6 D Bidirectional Switch S1 PowerPAKt 1212-8 S1 3.30 mm S2 3.30 mm 1 G1 2 S2 3 G2 4 G1 G2 3 kW D1 8 3 kW D1 7 D2 6 D2 D1 5 D2 P-Channel MOSFET P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V –6.3 –4.3 –4.5 –3.1 ID TA = 85_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A –20 –2.3 –1.1 2.8 1.3 1.5 0.7 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 35 44 75 94 4 5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71430 S-03710—Rev. A, 14-May-01 www.vishay.com 1 Si7901EDN New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –800 mA –0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea VDS = 0 V, VGS = "4.5 V "1.5 nA VDS = 0 V, VGS = "12 V "10 mA VDS = –16 V, VGS = 0 V –1 VDS = –16 V, VGS = 0 V, TJ = 85_C –5 VDS v –5 V, VGS = –4.5 V m mA –20 A VGS = –4.5 V, ID = –6.3 A 0.041 0.048 VGS = –2.5 V, ID = –5.3 A 0.057 0.068 VGS = –1.8 V, ID = –1 A 0.072 0.090 gfs VDS = –15 V, ID = –6.3 A 14 VSD IS = –2.3 A, VGS = 0 V –0.8 –1.2 12 18 VDS = –10 V, VGS = –4.5 V, ID = –6.3 A 2.5 rDS(on) Forward Transconductancea V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs nC Gate-Drain Charge Qgd 2.9 Turn-On Delay Time td(on) 2.5 4 tr 4 6 15 23 12 18 Rise Time Turn-Off Delay Time VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W td(off) Fall Time tf m ms Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 8 10,000 I GSS – Gate Current (mA) I GSS – Gate Current (mA) 1,000 6 4 2 100 TJ = 150_C 10 1 0.1 TJ = 25_C 0.01 0 0.001 0 4 8 12 VGS – Gate-to-Source Voltage (V) www.vishay.com 2 16 0 3 6 9 12 15 VGS – Gate-to-Source Voltage (V) Document Number: 71430 S-03710—Rev. A, 14-May-01 Si7901EDN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 TC = –55_C VGS = 5 thru 2.5 V 25_C 16 I D – Drain Current (A) I D – Drain Current (A) 16 2V 12 8 1.5 V 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 125_C 12 8 4 0 0.0 4.0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.5 3.0 Capacitance 2000 VGS = 1.8 V 0.12 0.09 VGS = 2.5 V 0.06 VGS = 4.5 V 1200 800 0.03 400 0.00 0 0 Ciss 1600 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 2.0 VGS – Gate-to-Source Voltage (V) 0.15 4 8 12 16 20 Coss Crss 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 5 1.5 VDS = 10 V ID = 6.3 A 4 r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 1.5 3 2 1 0 0 2 4 6 8 10 Qg – Total Gate Charge (nC) Document Number: 71430 S-03710—Rev. A, 14-May-01 12 14 VGS = 4.5 V ID = 6.3 A 1.3 1.1 0.9 0.7 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si7901EDN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.14 20 r DS(on) – On-Resistance ( W ) 0.12 I S – Source Current (A) 10 TJ = 150_C TJ = 25_C 0.10 0.08 ID = 6.3 A 0.06 0.04 0.02 0.00 1 0 0.3 0.6 0.9 1.2 1.5 0 1.8 1 VSD – Source-to-Drain Voltage (V) 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 50 ID = 800 mA 0.3 40 0.2 Power (W) V GS(th) Variance (V) 2 0.1 30 20 0.0 10 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 600 Time (sec) TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71430 S-03710—Rev. A, 14-May-01 Si7901EDN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) Document Number: 71430 S-03710—Rev. A, 14-May-01 www.vishay.com 5