MGA-412P8 GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications Data Sheet Description Features Avago Technologies’s MGA-412P8 linear power amplifier is designed for applications in the (1.7-3) GHz frequency range. The amplifier is optimized for IEEE 802.11b/g WLAN applications and has a best-inclass efficiency (PAE) of 25.5% (54Mbps OFDM) achieved through the use of Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process. • Advanced GaAs E-pHEMT The MGA-412P8 is housed in a miniature 2.0 x 2.0 x 0.75mm 3 8-lead leadless-plastic-chip-carrier (LPCC) package. The compact footprint, low profile and excellent thermal efficiency of the LPCC package makes the MGA-412P8 an ideal choice as a power amplifier for mobile IEEE 802.11b/g WLAN applications. It achieves +19.0 dBm linear output power that meets 3% EVM at 54Mbps data rate (OFDM Modulation), and 23dBm at 11Mbps (CCCK modulation). • Integrated power detector & power down functions • High efficiency • Single +3.3V Supply • Small Footprint: 2x2mm2 • Low Profile: 0.8mm max. Specifications • At 2.452 GHz; 3.3V (Typ.) : • Gain: 25.5 dB • P1dB: 25.3 dBm • Pout linear with IEEE 802.11g OFDM modulation @54Mbps data rate: 19.0 dBm @ 3% EVM. • Current @19dBm linear Pout: (54Mbps) : 95mA • Reverse Isolation (typ): > 40dB Component Image • Quiescent current (typ): 40mA 2.0 x 2.0 x 0.75 mm 8-lead LPCC • Meets IEEE 802.11b @11Mbps (CCCK modulation) with Pout: 23dBm while consuming 200mA. Pin 8 Pin 1 Applications Pin 7 Pin 2 Pin 6 Pin 3 • Power Amplifier for IEEE 802.11b/g WLAN applications Pin 5 Pin 4 • 2.4GHz ISM band applications Bottom View 1:Gnd 8:Det 2:RFin 7:RFout 2:Gnd 1CX 6:Vdd2 5:Pwr Down 4:Vdd1 • Bluetooth Power Amplifier Top View Note: Package marking provides Orientation and Identification "1C" = Product Code "X" = Date code indicates month of manufacture Attention Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 50 V ESD Human Body Model = 200 V Refer to Avago Technologies Application Note A004R: Electrostatic Discharge, Damage and Control. Absolute Maximum Rating [1] Tc=25°C Sym bol Param eter Units Absolute M ax. V dd Device Voltage, RF output to ground V 5 P in CW RF Input Power (Vdd = 3.3V ) dBm 10 P diss Total Power Dissipation [3] W 0.8 Junction Temperature o C 150 Storage Tem perature o C -65 to 150 Tj T STG Thermal Resistance [2] (Vdd = 3.3V), θjc = 33.3 °C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150 °C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tb is 25 °C. Derate 30mW/ °C for Tb>123.36 °C. Product Consistency Distribution Charts [4,5] USL 30 35 40 45 50 55 Figure 1. Id@ 2.452GHz; Nominal = 40mA, USL: 55mA LSL 24 24.2 24.6 25 25.2 25.6 26 Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dB LSL 23 24 25 26 27 28 Figure 3. Gain@ 2.452GHz; Nominal = 25.5dB, LSL: 23 dB 2 Notes: 4. Distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 5. Measurements are made on production test board, which represents a trade-off between optimal Gain and P1dB. Circuit losses have been de-embedded from actual measurements. Electrical Specifications[6] Tc = 25 °C, 2.452 GHz [typical, measured on demo board].DC bias for RF parameters Vdd =Vsd=3.3V Unless otherwise specified, all data are taken with OFDM 64-QAM modulated signal per IEEE802.11g specifications at 54Mbps data rate. Symbol Parameter Units Idq Quiescent current Isd MIN TYP MAX mA 40 55 Current drawn by Shutdown pin mA 0.5 I_leak Total current consumption at shutdown(Vsd=0V) uA 5 G Gain dB Psat Saturated Power dBm P1dB 1 dB Compression Point dBm Gain Flatness (2.4 - 2.5GHz) dB 1 Poutn Max Pout per IEEE 802.11b mask (CCCK modulation) dBm 23 Idn Current @ 23dBm 802.11b BPSK mA 200 Poutl Linear Power @ 3% EVM, 54Mbps OFDM dBm 19 Idl Current @ 3% EVM mA 95 S11 Input Return Loss dB -5.5 S22 Output Return Loss dB -11.5 S12 Isolation dB >40 OIP3 Large Signal, Output IP3 (2-tone at ± 10MHz from carrier freq) dBm 38 23 25.5 27 24 25.3 Notes: 6. Measurements taken on demo board as shown on Figure 4. Excess circuit losses have been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values any where within the upper and lower spec limits. 3 Demo board Diagram DET 5.6nH 5.6nH 0ohm 6.8pF 1.2pF 6.8pF INPUT 1.5pF 0.4mm OUTPUT 5.6nH 1000pF 0.56mm C 0ohm 2.2uF 22ohm 1000pF 0.1uF OCT 2005 Rev 1.1 SD Figure 4. Demo board and Application Circuit Components 4 18nH Vdd Schematic Diagram Detector output RF Input P ort P1 L L5 L=5.6 nH R= L L6 L=5.6 nH R= C C1 C=6.8 pF 1 8 2 7 6 3 4 C C3 C=1.2 pF RF output C C C2 C4 C=1.5 pF C=6.8 pF P ort P2 5 L L3 L=5.6 nH TLIN* TL1 C C7 C=2.2 uF C C5 C=1000 pF Vshutdown = +3.3V ON Vshutdown =0V OFF C C8 C=1000 pF R R1 R=22 Ohm L L4 L=18 nH C C6 C=0.1 uF Vdd = +3.3V nom Figure 5. Demo Board Schematic Diagram * 0.56mm wide on 10mil thick Rogers RO4350 board - Components L6, C2 and C3 should be located as close to the packaged device pins as possible. - Components R1 and L4 are used to isolate the test board from Power Supply effects. - Recommended PCB material is Roger, RO4350. - Suggested component values may vary according to layout and PCB material. 5 MGA-412P8 Typical Performance I Tc = +25 °C, Vdd = 3.3V Input Signal=CW unless stated otherwise. Vdet vs Pout Pout and Gain vs Pin 30 2.5 VDD=3V 25 2 Gain 15 10 VDD=3.6V 1.5 Detector(V) Pout & Gain VDD=3.3V Pout 20 1 5 0.5 0 -25 -20 -15 -10 -5 0 0 5 5 7 9 11 Input Power (dBm) 13 15 17 19 21 23 25 27 Output Power (dBm) Figure 6. Output Power and Gain vs Input Power Figure 7. Detector vs Output Power MGA-412P8 Typical Performance II Tc = +25 °C, Vdd = 3.3V Input Signal=OFDM signal with 54Mbps, Modulation=64QAM unless stated otherwise. EVM vs Modulated Pout 12 11 10 9 8 7 6 5 4 3 2 1 0 180 160 EVM 140 Current 80 60 VDD=3.0V VDD=3.3V EVM(%) 100 Current (mA) 120 40 20 0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 EVM (%) EVM & Current vs Modulated Pout 12 11 10 9 8 7 6 5 4 3 2 1 0 VDD=3.6V 5 Modulated Output Power (dBm) Figure 8. EVM & Current vs Output Power 9 11 13 15 17 19 21 Modulated Output Power (dBm) 23 25 Figure 9. EVM vs Modulated Output Power Total current vs Modulated Output Power PAE vs Modulated Output Power 60 180 160 VDD=3.0V 140 50 VDD=3.3V 120 40 VDD=3.6V 100 PAE% IDD(mA) 7 80 60 30 20 40 10 20 0 0 5 7 9 11 13 15 17 19 21 Modulated Output Power(dBm) Figure 10. Total Current vs Modulated Output Power 6 23 25 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Modulated Output Power (dBm) Figure 11. PAE vs Modulated Output Power 25 Deg C -40 Deg C 85 Deg C 5 7 9 dB(S(2,1)) EVM(%) EVM vs Modulated Output Power 12 11 10 9 8 7 6 5 4 3 2 1 0 11 13 15 17 19 21 Modulated Output Power (dBm) 23 25 27.0 26.5 26.0 25.5 25.0 24.5 24.0 23.5 23.0 22.5 22.0 2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60 freq, GHz Figure 12. EVM vs Modulated Output Power at different Temperature -4 dB(S(2,2)) dB(S(1,1)) -6 -8 -10 -12 2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60 freq, GHz Figure 13. Typical Spectral Plot conforming compliance to IEEE 802.11b 11Mbps CCCK modulation mask at 23dBm output power Figure 14. Typical Scattering Parameter Plots 2 x 2LPCC (JEDEC DFP-N) Package Dimensions D1 D pin1 P pin1 8 1 2 e E1 3 R 1CX 4 7 E 6 5 b L Top View Bottom View A A1 A A2 End View 7 DIMENSIONS End View SYMBOL A A1 A2 b D D1 E E1 e MIN. 0.70 0 0.225 1.9 0.65 1.9 1.45 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC MAX. 0.80 0.05 0.275 2.1 0.95 2.1 1.75 DIMENSIONS ARE IN MILLIMETERS PCB Land Pattern and Stencil Design 2.72 (107.09) 2.80 (110.24) 0.70 (27.56) 0.63 (24.80) 0.25 (9.84) 0.22 (8.86) 0.25 (9.84) PIN 1 0.50 (19.68) 0.50 (19.68) 0.20 (7.87) Solder mask RF transmission line 0.32 (12.79) PIN 1 1.54 (60.61) 1.60 (62.99) 0.28 (10.83) + 0.60 (23.62) 0.25 (9.74) 0.63 (24.80) 0.72 (28.35) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) Stencil Layout (top view) PCB Land Pattern (top view) Device Orientation 4 mm REEL 8 mm 1CX 1CX 1CX 1CX CARRIER TAPE USER FEED DIRECTION COVER TAPE Part Number Ordering Information Part Number No. of Devices Container MGA-412P8-TR1G 3000 7" Reel MGA-412P8-TR2G 10000 13" Reel MGA-412P8-BLKG 100 antistatic bag For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. AV01-0236EN - June 2, 2006