AVAGO MGA

MGA-412P8
GaAs Enhancement-mode pHEMT Power Amplifier
optimized for IEEE 802.11b/g applications
Data Sheet
Description
Features
Avago Technologies’s MGA-412P8 linear power
amplifier is designed for applications in the (1.7-3)
GHz frequency range. The amplifier is optimized for
IEEE 802.11b/g WLAN applications and has a best-inclass efficiency (PAE) of 25.5% (54Mbps OFDM)
achieved through the use of Avago Technologies’
proprietary GaAs Enhancement-mode pHEMT
process.
• Advanced GaAs E-pHEMT
The MGA-412P8 is housed in a miniature 2.0 x 2.0 x
0.75mm 3 8-lead leadless-plastic-chip-carrier (LPCC)
package. The compact footprint, low profile and
excellent thermal efficiency of the LPCC package
makes the MGA-412P8 an ideal choice as a power
amplifier for mobile IEEE 802.11b/g WLAN
applications.
It achieves +19.0 dBm linear output power that meets
3% EVM at 54Mbps data rate (OFDM Modulation),
and 23dBm at 11Mbps (CCCK modulation).
• Integrated power detector & power down functions
• High efficiency
• Single +3.3V Supply
• Small Footprint: 2x2mm2
• Low Profile: 0.8mm max.
Specifications
• At 2.452 GHz; 3.3V (Typ.) :
• Gain: 25.5 dB
• P1dB: 25.3 dBm
• Pout linear with IEEE 802.11g OFDM modulation
@54Mbps data rate: 19.0 dBm @ 3% EVM.
• Current @19dBm linear Pout: (54Mbps) : 95mA
• Reverse Isolation (typ): > 40dB
Component Image
• Quiescent current (typ): 40mA
2.0 x 2.0 x 0.75 mm
8-lead LPCC
• Meets IEEE 802.11b @11Mbps (CCCK modulation)
with Pout: 23dBm while consuming 200mA.
Pin 8
Pin 1
Applications
Pin 7
Pin 2
Pin 6
Pin 3
• Power Amplifier for IEEE 802.11b/g WLAN
applications
Pin 5
Pin 4
• 2.4GHz ISM band applications
Bottom View
1:Gnd
8:Det
2:RFin
7:RFout
2:Gnd
1CX
6:Vdd2
5:Pwr Down
4:Vdd1
• Bluetooth Power Amplifier
Top View
Note:
Package marking provides Orientation and Identification
"1C" = Product Code
"X" = Date code indicates month of manufacture
Attention
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Technologies Application
Note A004R: Electrostatic Discharge,
Damage and Control.
Absolute Maximum Rating [1] Tc=25°C
Sym bol
Param eter
Units
Absolute M ax.
V dd
Device Voltage, RF output to
ground
V
5
P in
CW RF Input Power (Vdd = 3.3V )
dBm
10
P diss
Total Power Dissipation [3]
W
0.8
Junction Temperature
o
C
150
Storage Tem perature
o
C
-65 to 150
Tj
T STG
Thermal Resistance [2]
(Vdd = 3.3V), θjc = 33.3 °C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150 °C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb is 25
°C. Derate 30mW/ °C for Tb>123.36 °C.
Product Consistency Distribution Charts [4,5]
USL
30
35
40
45
50
55
Figure 1. [email protected] 2.452GHz; Nominal = 40mA, USL: 55mA
LSL
24 24.2
24.6
25 25.2
25.6
26
Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dB
LSL
23
24
25
26
27
28
Figure 3. [email protected] 2.452GHz; Nominal = 25.5dB, LSL: 23 dB
2
Notes:
4. Distribution data sample size is 500 samples taken from 3 different
wafers and 3 different lots. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
5. Measurements are made on production test board, which
represents a trade-off between optimal Gain and P1dB. Circuit
losses have been de-embedded from actual measurements.
Electrical Specifications[6]
Tc = 25 °C, 2.452 GHz [typical, measured on demo board].DC bias for RF parameters Vdd =Vsd=3.3V
Unless otherwise specified, all data are taken with OFDM 64-QAM modulated signal per IEEE802.11g
specifications at 54Mbps data rate.
Symbol
Parameter
Units
Idq
Quiescent current
Isd
MIN
TYP
MAX
mA
40
55
Current drawn by Shutdown pin
mA
0.5
I_leak
Total current consumption at shutdown(Vsd=0V)
uA
5
G
Gain
dB
Psat
Saturated Power
dBm
P1dB
1 dB Compression Point
dBm
Gain Flatness (2.4 - 2.5GHz)
dB
1
Poutn
Max Pout per IEEE 802.11b mask (CCCK modulation)
dBm
23
Idn
Current @ 23dBm 802.11b BPSK
mA
200
Poutl
Linear Power @ 3% EVM, 54Mbps OFDM
dBm
19
Idl
Current @ 3% EVM
mA
95
S11
Input Return Loss
dB
-5.5
S22
Output Return Loss
dB
-11.5
S12
Isolation
dB
>40
OIP3
Large Signal, Output IP3 (2-tone at ± 10MHz from carrier
freq)
dBm
38
23
25.5
27
24
25.3
Notes:
6. Measurements taken on demo board as shown on Figure 4. Excess circuit losses have been de-embedded from actual measurements.
Standard deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this
product may have nominal values any where within the upper and lower spec limits.
3
Demo board Diagram
DET
5.6nH
5.6nH
0ohm
6.8pF
1.2pF
6.8pF
INPUT
1.5pF
0.4mm
OUTPUT
5.6nH
1000pF
0.56mm
C
0ohm
2.2uF
22ohm
1000pF
0.1uF
OCT 2005
Rev 1.1
SD
Figure 4. Demo board and Application Circuit Components
4
18nH
Vdd
Schematic Diagram
Detector output
RF Input
P ort
P1
L
L5
L=5.6 nH
R=
L
L6
L=5.6 nH
R=
C
C1
C=6.8 pF
1
8
2
7
6
3
4
C
C3
C=1.2 pF
RF output
C
C
C2
C4
C=1.5 pF C=6.8 pF
P ort
P2
5
L
L3
L=5.6 nH
TLIN*
TL1
C
C7
C=2.2 uF
C
C5
C=1000 pF
Vshutdown = +3.3V ON
Vshutdown =0V OFF
C
C8
C=1000 pF
R
R1
R=22 Ohm
L
L4
L=18 nH
C
C6
C=0.1 uF
Vdd = +3.3V nom
Figure 5. Demo Board Schematic Diagram
* 0.56mm wide on 10mil thick Rogers RO4350 board
- Components L6, C2 and C3 should be located as close to the packaged device pins as possible.
- Components R1 and L4 are used to isolate the test board from Power Supply effects.
- Recommended PCB material is Roger, RO4350.
- Suggested component values may vary according to layout and PCB material.
5
MGA-412P8 Typical Performance I
Tc = +25 °C, Vdd = 3.3V Input Signal=CW unless stated otherwise.
Vdet vs Pout
Pout and Gain vs Pin
30
2.5
VDD=3V
25
2
Gain
15
10
VDD=3.6V
1.5
Detector(V)
Pout & Gain
VDD=3.3V
Pout
20
1
5
0.5
0
-25
-20
-15
-10
-5
0
0
5
5
7
9
11
Input Power (dBm)
13
15
17
19
21
23
25
27
Output Power (dBm)
Figure 6. Output Power and Gain vs Input Power
Figure 7. Detector vs Output Power
MGA-412P8 Typical Performance II
Tc = +25 °C, Vdd = 3.3V Input Signal=OFDM signal with 54Mbps, Modulation=64QAM unless stated otherwise.
EVM vs Modulated Pout
12
11
10
9
8
7
6
5
4
3
2
1
0
180
160
EVM
140
Current
80
60
VDD=3.0V
VDD=3.3V
EVM(%)
100
Current (mA)
120
40
20
0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
EVM (%)
EVM & Current vs Modulated Pout
12
11
10
9
8
7
6
5
4
3
2
1
0
VDD=3.6V
5
Modulated Output Power (dBm)
Figure 8. EVM & Current vs Output Power
9
11
13
15
17
19
21
Modulated Output Power (dBm)
23
25
Figure 9. EVM vs Modulated Output Power
Total current vs Modulated Output Power
PAE vs Modulated Output Power
60
180
160
VDD=3.0V
140
50
VDD=3.3V
120
40
VDD=3.6V
100
PAE%
IDD(mA)
7
80
60
30
20
40
10
20
0
0
5
7
9
11
13
15
17
19
21
Modulated Output Power(dBm)
Figure 10. Total Current vs Modulated Output Power
6
23
25
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Modulated Output Power (dBm)
Figure 11. PAE vs Modulated Output Power
25 Deg C
-40 Deg C
85 Deg C
5
7
9
dB(S(2,1))
EVM(%)
EVM vs Modulated Output Power
12
11
10
9
8
7
6
5
4
3
2
1
0
11
13
15
17
19
21
Modulated Output Power (dBm)
23
25
27.0
26.5
26.0
25.5
25.0
24.5
24.0
23.5
23.0
22.5
22.0
2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60
freq, GHz
Figure 12. EVM vs Modulated Output Power at different
Temperature
-4
dB(S(2,2))
dB(S(1,1))
-6
-8
-10
-12
2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60
freq, GHz
Figure 13. Typical Spectral Plot conforming compliance to IEEE
802.11b 11Mbps CCCK modulation mask at 23dBm output power
Figure 14. Typical Scattering Parameter Plots
2 x 2LPCC (JEDEC DFP-N) Package Dimensions
D1
D
pin1
P
pin1
8
1
2
e
E1
3
R
1CX
4
7
E
6
5
b
L
Top View
Bottom View
A A1
A
A2
End View
7
DIMENSIONS
End View
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
MIN.
0.70
0
0.225
1.9
0.65
1.9
1.45
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
MAX.
0.80
0.05
0.275
2.1
0.95
2.1
1.75
DIMENSIONS ARE IN MILLIMETERS
PCB Land Pattern and Stencil Design
2.72 (107.09)
2.80 (110.24)
0.70 (27.56)
0.63 (24.80)
0.25 (9.84)
0.22 (8.86)
0.25 (9.84)
PIN 1
0.50 (19.68)
0.50 (19.68)
0.20 (7.87)
Solder
mask
RF
transmission
line
0.32 (12.79)
PIN 1
1.54 (60.61)
1.60 (62.99)
0.28 (10.83)
+
0.60 (23.62)
0.25 (9.74)
0.63 (24.80)
0.72 (28.35)
0.80 (31.50)
0.15 (5.91)
0.55 (21.65)
Stencil Layout (top view)
PCB Land Pattern (top view)
Device Orientation
4 mm
REEL
8 mm
1CX
1CX
1CX
1CX
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
Part Number Ordering Information
Part Number
No. of Devices Container
MGA-412P8-TR1G
3000
7" Reel
MGA-412P8-TR2G
10000
13" Reel
MGA-412P8-BLKG
100
antistatic bag
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
AV01-0236EN - June 2, 2006