@vic AV9014 TO-92 Plastic-Encapsulate Transistors AV9014 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ TO—92 1. EMITTER 2. BASE 3.COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO Ic= 100 μA， IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA， IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE= 100 μA， IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=35 V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3 V， IC=0 0.1 μA DC current gain HFE VCE= 5 V, IC= 1mA Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 5 mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 5mA 1 V Parameter UNIT 1000 VCE= 5 V, IC= 10mA fT Transition frequency 60 MAX 150 f =30MHz MHz CLASSIFICATION OF HFE Rank Range A B C D 60-150 100-300 200-600 400-1000 Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com @vic AV9014 Typical Characteristics 1000 IB=160μA IB=140μA IB=120μA 80 70 hFE, DC Current Gain IC[mA], Collector Current 100 90 IB=100μA 60 IB=80μA 50 IB=60μA 40 IB=40μA 30 20 IB=20μA 10 0 VCE = 5V 100 10 0 10 20 30 50 40 1 VCE[V], Collector-Emitter Voltage Figure 1. Static Characteristic fT[MHz], Current Gain-Bandwidth Product VBE(sat), VCE(sat)[V], Saturation Voltage VBE(sat) VCE(sat) IC=10IB 10 1 10 100 1000 VCE = 5V 100 10 1 1000 IC[mA], Collector Current Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Copyright © Avic Electronics Corp. 1000 100 IC[mA], Collector Current Figure 2. DC current Gain 1000 100 10 2 10 100 1000 IC[mA], Collector Current Figure 4. Current Gain Bandwidth Product Website: http://www.avictek.com