Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 General Description Features The AH278 is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide switching hysteresis for noise rejection and two complementary open-collector drivers for sinking large load current. It also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits and allows a wide operating supply voltage ranges. · · · · · · · · On-Chip Hall Sensor 4V to 30V Supply Voltage 500mA (avg) Output Sink Current Build in Protection Diode for Reverse Power Connecting -20oC to 85oC Operating Temperature Low Profile TO-94 (SIP-4L) Package Build in Over Temperature Protection Function ESD Rating: 300V(Machine Model) Applications Placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold BOP, the pin DO will be turned low (on) and pin DOB will be turned high (off). This output state is held until the magnetic flux density reverses and falls below BRP, then causes DO to be turned high (off) and DOB turned low (on). · · · · 12V/24V Dual-Coil Brushless DC Motor/Fan Power Supply and Switchboard Communications Facilities Industrial Equipment AH278 is available in TO-94 (SIP-4L) package. TO-94 Figure 1. Package Type of AH278 Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 Pin Configuration Z4 Package (TO-94) 4 GND 3 2 DOB DO 1 VCC Figure 2. Pin Configuration of AH278 (Top View) Pin Description Pin Number Pin Name Function 1 VCC Supply voltage 2 DO Output 1 3 DOB Output 2 4 GND Ground Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 Functional Block Diagram VCC DO 1 2 Over-Temperature Protection Regulator 4 GND Hall Sensor Schmitt Trigger Amplifier Output Driver 3 DOB Figure 3. Functional Block Diagram of AH278 Ordering Information AH278 - Circuit Type E1: Lead Free Package Z4: TO-94 (SIP-4L) Magnetic Characteristics A: 10 to 70Gauss B: 100Gauss Package Temperature Range TO-94 -20 to 85 oC Part Number Marking ID Packing Type AH278Z4-AE1 AH278Z4-E1 Bulk AH278Z4-BE1 AH278Z4-E1 Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 Absolute Maximum Ratings (Note 1) (TA=25oC) Parameter Symbol Value Unit Supply Voltage VCC 30 V Reverse Protection Voltage VRCC -30 V B Unlimited Gauss 500 (Note 2) mA 600 mA 800 mA PD 550 mW Die to atmosphere θJA 227 oC/W Die to package case θJC 49 oC/W TSTG -50 to 150 oC 300 V Magnetic Flux Density Continuous Output Current IO Hold Peak (start up) Power Dissipation Thermal Resistance Storage Temperature ESD (Machine Model) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability. Note 2: Continuos output current is 300mA at 85oC. Recommended Operating Conditions Parameter Supply Voltage Operating Ambient Temperature Symbol Min Max VCC 4 28 V 85 o TA -20 Feb. 2007 Rev. 1. 1 Unit C BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 Electrical Characteristics (TA=25oC, VCC=24V, unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit VCC=5V, IO=100mA 0.1 0.3 V Output Saturation Voltage VSAT1 IO=500mA 0.5 0.8 V Output Saturation Voltage VSAT2 IO=300mA 0.25 0.5 V Low Supply Voltage VCE Output Leakage Current IOL VDO,VDOB=24V 0.1 10 µA Supply Current ICC VCC=24V, Output Open 12.5 16 mA tr RL=820Ω, CL=20pF 3.0 10 µs Output Fall Time tf RL=820Ω, CL=20pF 0.3 1.5 µs Switch Time Differential ∆t RL=820Ω, CL=20pF 3.0 10 µs Output Rise Time Output Zener Breakdown Voltage VZO 60 V Magnetic Characteristics (TA=25oC) Parameter Symbol BOP Operating Point Grade Min A 10 Typ B BRP Releasing Point Hysteresis A -70 B -100 Max Unit 70 Gauss 100 Gauss -10 Gauss Gauss 80 BHYS Gauss VDO (V) Off-state High BHYS Turn off Turn on Low VSAT On-state N BRP 0 BOP S Magnetic Flux Density (Gauss) Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 Magnetic Characteristics (Continued) +24V AH278 S VCC 1 Marking Side DO DOB GND 2 4 3 DO (VOUT1) R1 820Ω R2 N DOB (VOUT2) 820Ω C1 C2 20pF 20pF Figure 4. Basic Test Circuit DO (V) DOB (V) 16 16 VCC 14 14 12 12 10 10 8 8 6 6 4 4 2 -40 -20 0 VSAT 20 2 VSAT 40 -40 Magnetic Flux Density B (Gauss) VCC -20 0 20 40 Magnetic Flux Density B (Gauss) Figure 5. VDO vs. Magnetic Flux Density Figure 6. VDOB vs. Magnetic Flux Density Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 Typical Performance Characteristics 14 80 12 60 BOP/BRP/BHYS (GS) ICC (mA) 10 o TA=25 C 8 6 40 20 BOP BRP BHYS 0 o TA=25 C 4 -20 2 -40 0 0 5 10 15 20 5 25 10 15 20 25 VCC (V) VCC (V) Figure 7. ICC vs. VCC Figure 8. BOP/BRP/BHYS vs. VCC 800 80 600 40 PD (mW) BOP/BRP/BHYS (GS) 60 20 BOP BRP BHYS VCC=24V 0 -20 400 200 -40 -60 -20 0 20 40 60 0 -25 80 o TA ( C) 0 25 50 75 100 125 150 o TA ( C) Figure 9. BOP/BRP/BHYS vs. Ambient Temperature Figure 10. PD vs. Ambient Temperature Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 Typical Performance Characteristics (Continued) 400 13 300 11 250 VSAT (mV) ICC (mA) 350 12 VCC=4V VCC=14V VCC=24V 10 200 150 9 VCC=24V IO=300mA 100 8 50 7 -20 0 20 40 60 0 -20 80 0 20 40 60 80 o o TA ( C) TA ( C) Figure 11. ICC vs. Ambient Temperature Figure 12. VSAT vs. Ambient Temperature Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 Typical Applications D1 AH278 VCC DO 1 2 COIL1 COIL2 DOB GND 4 3 R1 VCC Z1 Z2 R1: R1< (VCC-5.5V)/16mA, 0.5W (Note 3) Z1, Z2: Zener diode, 2*VCC≤VZ≤60V Figure 13. Typical Application Circuit with D1 Note 3: Recommended R1 for different VCC VCC (V) 7 8 9 10 11 12 13 14 15 16 17 R1 (Ω) 0 0 0 0 0 0 470 510 560 620 680 VCC (V) 18 19 20 21 22 23 24 25 26 27 28 R1 (Ω) 750 820 820 910 1k 1k 1.1k 1.2k 1.2k 1.3k 1.3k Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH278 Mechanical Dimensions TO-94 0.500(0.020) 0.700(0.028) 3.780(0.149) 4.080(0.161) Unit: mm(inch) 45°TYP 1.400(0.055) 1.800(0.071) 0.700(0.028) 0.900(0.035) 4.980(0.196) 5.280(0.208) 0.360(0.014) 0.510(0.020) 1.850(0.073) 1.250(0.050) Hall Sensor Location 0.380(0.015) 0.550(0.022) 0.360(0.014) 0.500(0.020) 14.900(0.587) 15.300(0.602) 1.270(0.050) TYP 3.710(0.146) 3.910(0.154) Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 10 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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