BCDSEMI AP2128K

Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
General Description
Features
The AP2128 Series are positive voltage regulator ICs
fabricated by CMOS process. The AP2128 provides
two kinds of output voltage operation modes for
setting the output voltage. Fixed output voltage mode
senses the output voltage on VOUT, adjustable output
·
·
·
·
voltage mode needs two resistors as a voltage divider
·
·
·
·
·
·
The AP2128 Series have features of low dropout
voltage, low noise, high output voltage accuracy, and
low current consumption which make them ideal for
use in various battery-powered devices.
AP2128 has 1.0V, 1.2V, 3.3V fixed voltage version and
0.8V to 4.5V adjustable voltage version.
·
·
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AP2128 series are available in SOT-23-5 Package.
AP2128
Wide Operating Voltage: 2.5V to 6V
Low Dropout Voltage (3.3V only):
[email protected]
High Output Voltage Accuracy: ±2%
High Ripple Rejection:
65dB@ f=1kHz, 45dB@ f=10kHz
Low Standby Current: 0.1µA
Low Quiescent Current: 60µA Typical
Low Output Noise: 60µVrms
Short Current Limit: 50mA
Over Temperature Protection
Compatible with Low ESR Ceramic Capacitor:
1µF for CIN and COUT
Excellent Line/Load Regulation
Soft Start Time: 50µs
Auto Discharge Resistance: RDS(ON)=60Ω
Applications
·
·
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Datacom
Notebook Computers
Mother Board
SOT-23-5
Figure 1. Package Type of AP2128
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Pin Configuration
K Package
(SOT-23-5)
Shutdown
1
GND
2
VIN
3
5
ADJ/NC
4
VOUT
Figure 2. Pin Configuration of AP2128 (Top View)
Functional Block Diagram
UVLO &
Shutdown
Logic
SHUTDOWN
VIN
Foldback
Current Limit
Thermal
Shutdown
VOUT
3MΩ
NC
VREF
GND
Fixed Version
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Functional Block Diagram (Continued)
UVLO &
Shutdown
Logic
SHUTDOWN
VIN
Foldback
Current Limit
Thermal
Shutdown
VOUT
3MΩ
ADJ
VREF
GND
Adjustable Version
Figure 3. Functional Block Diagram of AP2128
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Ordering Information
AP2128
G1: Green
Circuit Type
TR: Tape and Reel
Package
ADJ: ADJ Output
1.0: Fixed Output 1.0V
1.2: Fixed Output 1.2V
3.3: Fixed Output 3.3V
K: SOT-23-5
Product
AP2128
Package
SOT-23-5
Temperature
Range
-40 to 85oC
Part Number
Marking ID
Green
Green
Packing Type
AP2128K- ADJTRG1
FAD
Tape & Reel
AP2128K-1.0TRG1
FAJ
Tape & Reel
AP2128K-1.2TRG1
FAK
Tape & Reel
AP2128K-3.3TRG1
FAL
Tape & Reel
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Shutdown Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
450
mA
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
Thermal Resistance
RθJA
250
oC/W
ESD (Human Body Model)
ESD
6000
V
ESD (Machine Model)
ESD
300
V
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
2.5
6
V
TJ
-40
85
oC
Operating Junction Temperature Range
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
5
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Electrical Characteristics
(AP2128-ADJ, VIN min=2.5V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Reference Voltage
Input Voltage
Maximum Output Current
Symbol
VREF
Conditions
VIN=2.5V
1mA≤IOUT≤300mA
VIN
Min
Typ
Max
Unit
0.748
0.8
0.816
V
6
V
2.5
IOUT(MAX)
450
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN-VOUT=1V,
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V
IOUT=30mA
0.06
%/V
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
VIN=VOUT+1V, IOUT=0mA
60
90
µA
ISTD
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
µA
PSRR
Ripple 1Vp-p
VIN=VOUT+1V
IQ
(∆VOUT/VOUT)
/∆T
Output Current Limit
ILIMIT
Short Current Limit
ISHORT
Soft Start Time
RMS Output Noise
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
±100
ppm/oC
400
mA
50
mA
50
µs
60
µVrms
IOUT=30mA, -40oC≤TJ≤85oC
VOUT=0V
tUP
VNOISE
o
TA=25 C, 10Hz ≤f≤100kHz
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
Shutdown Pull Down Resistance
60
Ω
3
MΩ
Thermal Shutdown
165
o
Thermal Shutdown Hysteresis
30
o
Jun. 2008 Rev. 1.1
C
C
BCD Semiconductor Manufacturing Limited
6
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Electrical Characteristics (Continued)
(AP2128-1.0V/1.2V,VIN min. =2.5V, AP2128-3.3V,
CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
Min
VIN=VOUT+1V
1mA≤IOUT≤300mA
VIN
Max
Unit
98%*
VOUT
102%*
VOUT
V
2.5
6
V
IOUT(MAX)
Typ
450
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN-VOUT=1V,
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V
IOUT=30mA
0.06
%/V
Dropout Voltage
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
VDROP
IQ
ISTD
PSRR
(∆VOUT/VOUT)
/∆T
VOUT=1.0V, IOUT=300mA
1400
1500
VOUT=1.2V, IOUT=300mA
1200
1300
VOUT=3.3V, IOUT=300mA
170
300
VIN=VOUT+1V, IOUT=0mA
60
90
µA
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
µA
Ripple 1Vp-p
VIN=VOUT+1V
mV
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
±100
ppm/oC
IOUT=30mA, -40oC≤TJ≤85oC
Output Current Limit
ILIMIT
VIN-VOUT=1V,
VOUT=0.98*VOUT
400
mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
50
µs
60
µVrms
Soft Start Time
RMS Output Noise
tUP
VNOISE
TA=25oC,
10Hz ≤f≤100kHz
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
60
Ω
3
MΩ
Thermal Shutdown
165
oC
Thermal Shutdown Hysteresis
30
oC
Shutdown Pull Down Resistance
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
7
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics
240
3.5
1.0
220
T C=-40 C
3.0
200
0.8
T C=25 C
180
T C=125 C
2.5
0.7
Dropout Voltage (mV)
Output
(V)(V)
OutputVoltge
Voltage
0.9
0.6
2.0
0.5
1.5
0.4
o
o
Tc=-40 C TC=-40 C
0.3
1.0
o
Tc=25 C TC=25 C
o
o
T =125 C
Tc=85 C C
VIN=4.4V
o
0.2
0.5
0.1
00
50
100
100
150
200
200
250 300
300
350 400400
o
160
140
120
100
80
60
40
20
Vin=2.5V, Vout=0.8V
0.0
0.0
o
o
0
450 500500
50
100
Output
Current(V)
(mA)
Input Voltage
250
300
70
120
115
TC=-40 C
68
TC=25 C
66
TC=85 C
VIN=2.5V, VOUT=0.8V
64
o
110
o
105
IOUT=0
VIN=2.5V, VOUT=0.8V
o
100
95
Quiescent Current (µA)
Quiescent Current (µA)
200
Figure 5. Dropout Voltage vs. Output Current, VOUT=3.3V
Figure 4. Output Voltage vs. Output Current
90
85
80
75
70
65
60
62
60
58
56
54
52
55
50
150
Output Current (mA)
0
50
100
150
200
250
50
-40
300
-20
0
20
40
60
80
100
120
o
Case Temperature ( C)
Output Current (mA)
Figure 7. Quiescent Current vs. Case Temperature
Figure 6. Quiescent Current vs. Output Current
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
80
0.807
V =2.5V, CIN=COUT=1uF
IN
IOUT=10mA, Vout=0.8V
0.806
60
Output Voltage (V)
Quiescent Current (µA)
70
50
40
30
20
0.805
0.804
0.803
o
TC=25 C
VOUT=0.8V, IOUT=0
10
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.802
5.5
0.801
-40
6.0
-20
0
20
40
60
80
100
120
o
Input Voltage (V)
Case Temperature ( C)
Figure 8. Quiescent Current vs. Input Voltage
Figure 9. Output Voltage vs. Case Temperature
1.0
34
VIN=2.5V, VOUT=0.8V, CIN=COUT=1µF
0.9
0.8
0.7
Output Voltge (V)
Short Current (mA)
32
30
28
0.6
0.5
0.4
0.3
TC=-40 C
0.2
TC=25 C
0.1
TC=85 C
VOUT=0.8V
o
o
o
26
-40
-20
0
20
40
60
80
100
0.0
120
o
0
1
2
3
4
5
6
7
8
Input Voltage (V)
Case Temperature ( C)
Figure 10. Short Current vs. Case Temperature
Figure 11. Output Voltage vs. Input Voltage (IOUT=0mA)
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
9
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
1.0
2.0
0.9
1.8
0.8
1.6
0.7
1.4
Power Dissipation (W)
Output Voltge (V)
Typical Performance Characteristics (Continued)
0.6
0.5
0.4
o
0.3
TC=-40 C
0.2
TC=25 C
o
0.0
0
1
2
3
4
5
1.2
1.0
0.8
0.6
0.4
o
TC=85 C
VOUT=0.8V
0.1
VOUT=0.8V
No heatsink
0.2
0.0
-40
6
-20
0
20
40
60
80
100
120
o
Input Voltage (V)
Case Temperature( C)
Figure 12. Output Voltage vs. Input Voltage (IOUT=300mA)
Figure 13. Power Dissipation vs. Case Temperature
IOUT
IOUT
VOUT
VOUT
Figure 14. Load Transient
Figure 15. Load Transient
(Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=0.8V)
(Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V)
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
10
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
VIN
VIN
VOUT
VOUT
Figure 16. Line Transient
Figure 17. Line Transient
(Conditions: IOUT=30mA, CIN=COUT=1µF,
(Conditions: IOUT=30mA, CIN=COUT=1µF,
VIN=2.5 to 3.5V, VOUT=0.8V)
VIN=4 to 5V, VOUT=3.3V)
VOUT
VOUT
VShutdown
VShutdown
Figure 19. Soft Start Time
Figure 18. Soft Start Time
(Conditions: IOUT=0mA, CIN=COUT=1µF,
(Conditions: IOUT=0mA, CIN=COUT=1µF,
VShutdown=0 to 2V, VOUT=0.8V)
VShutdown=0 to 2V, VOUT=3.3V)
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
11
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Performance Characteristics (Continued)
100
100
IOUT=10mA
IOUT=300mA
ripple=1Vpp, COUT=1µF, VOUT=0.8V
90
80
70
70
60
60
PSRR (dB)
PSRR (dB)
80
50
40
50
40
30
30
20
20
10
10
0
0
100
1000
10000
IOUT=10mA
IOUT=300mA
ripple=1Vpp, COUT=1µF, VOUT=3.3V
90
100000
100
1000
10000
100000
Frequency (Hz)
Frequency (Hz)
Figure 21. PSRR vs. Frequency
Figure 20. PSSR vs. Frequency
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
12
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Typical Application
VIN
VOUT
VIN
VOUT
AP2128
Shutdown
R1
ADJ
R2
CIN
1µF
COUT
1µF
GND
VOUT=0.8*(1+R1/R2) V
VIN
VOUT
VIN
VOUT
AP2128
Shutdown
CIN
1µF
COUT
1µF
GND
VOUT=1.0, 1.2, 3.3V
Figure 22. Typical Application of AP2128
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
13
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
1.250(0.049)
1.050(0.041)
0.950(0.037)
TYP
0.000(0.000)
0.100(0.004)
1.050(0.041)
1.150(0.045)
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
14
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products or
or specifispecifications herein.
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