BCDSEMI AP2129K

Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
General Description
Features
The AP2129 is a 300mA, positive Voltage regulator
ICs fabricated by CMOS process. The AP2129
provides two kinds of output voltage operation modes
for setting the output voltage. Fixed output voltage
mode senses the output voltage on VOUT, adjustable
·
·
·
·
·
·
·
·
·
output voltage mode needs two resistors as a voltage
divider
The AP2129 Series have features of low dropout
voltage, low noise, high output voltage accuracy, and
low current consumption which make them ideal for
use in various battery-powered devices.
·
·
·
AP2129 has 1.0V, 1.2V, 3.3V fixed voltage version and
0.8V to 4.5V adjustable voltage version.
AP2129
Wide Operating Voltage: 1.8V to 6V
High Output Voltage Accuracy: ±2%
High Ripple Rejection:
[email protected] f=1kHz, [email protected] f=10kHz
Low Standby Current: 0.1µA
Low Quiescent Current: 60µA Typical
Low Output Noise: 60µVrms
Short Current Limit: 50mA
Over Temperature Protection
Compatible with Low ESR Ceramic Capacitor:
1µF for CIN and COUT
Excellent Line/Load Regulation
Soft Start Time: 50µs
Auto Discharge Resistance: RDS(ON)=60Ω
Applications
AP2129 series are available in SOT-23-5 Package.
·
·
·
Datacom
Notebook Computers
Mother Board
SOT-23-5
Figure 1. Package Type of AP2129
Jul. 2008 Rev. 1.0
BCD Semiconductor Manufacturing Limited
1
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Pin Configuration
K Package
(SOT-23-5)
Shutdown
1
GND
2
VIN
3
5
ADJ/NC
4
VOUT
Figure 2. Pin Configuration of AP2129 (Top View)
Functional Block Diagram
UVLO &
Shutdown
Logic
SHUTDOWN
VIN
Foldback
Current Limit
Thermal
Shutdown
VOUT
3MΩ
NC
VREF
GND
Jul. 2008 Rev. 1.0
BCD Semiconductor Manufacturing Limited
2
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Functional Block Diagram (Continued)
UVLO &
Shutdown
Logic
SHUTDOWN
VIN
Foldback
Current Limit
Thermal
Shutdown
VOUT
3MΩ
ADJ
VREF
GND
Figure 3. Functional Block Diagram of AP2129
Jul. 2008 Rev. 1.0
BCD Semiconductor Manufacturing Limited
3
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Ordering Information
AP2129
G1: Green
Circuit Type
TR: Tape and Reel
Package
ADJ: ADJ Output
1.0: Fixed Output 1.0V
1.2: Fixed Output 1.2V
3.3: Fixed Output 3.3V
K: SOT-23-5
Product
AP2129
Package
SOT-23-5
Temperature
Range
-40 to 85oC
Part Number
Marking ID Packing Type
AP2129K- ADJTRG1
GEJ
Tape & Reel
AP2129K-1.0TRG1
GEK
Tape & Reel
AP2129K-1.2TRG1
GEL
Tape & Reel
AP2129K-3.3TRG1
GEM
Tape & Reel
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Jul. 2008 Rev. 1.0
BCD Semiconductor Manufacturing Limited
4
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Shutdown Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
450
mA
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
Thermal Resistance
RθJA
250
oC/W
ESD (Human Body Model)
ESD
6000
V
ESD (Machine Model)
ESD
300
V
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
1.8
6
V
TJ
-40
85
oC
Operating Junction Temperature Range
Jul. 2008 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
5
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Electrical Characteristics
AP2129-1.0, 1.2 and 3.3 Electrical Characteristics
(CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
Min
VIN=VOUT+1V, (Note 2)
1mA≤IOUT≤300mA
VIN
Typ
Max
Unit
98%*
VOUT
102%*
VOUT
V
1.8
6
V
450
IOUT(MAX)
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN-VOUT=1V, (Note 2)
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V, (Note 2)
IOUT=30mA
0.06
%/V
VOUT=1.0V, IOUT=300mA
1400
1500
Dropout Voltage
VDROP
VOUT=1.2V, IOUT=300mA
1200
1300
VOUT=3.3V, IOUT=300mA
170
300
IQ
VIN=VOUT+1V, IOUT=0mA
60
90
µA
0.1
1.0
µA
Quiescent Current
Standby Current
ISTD
VIN=VOUT+1V,
VSHUTDOWN in off mode
Power Supply
Rejection Ratio
PSRR
Ripple 1Vp-p
VIN=VOUT+1V
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT)
/∆T
mV
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
±100
ppm/oC
IOUT=30mA, -40oC≤TJ≤85oC
Output Current Limit
ILIMIT
VIN-VOUT=1V,
VOUT=0.98*VOUT
400
mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
50
µs
60
µVrms
Soft Start Time
RMS Output Noise
tUP
VNOISE
Shutdown "High" Voltage
TA=25oC, 10Hz ≤f≤100kHz
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
Shutdown Pull Down Resistance
60
Ω
3
MΩ
Thermal Shutdown
165
Thermal Shutdown Hysteresis
30
o
C
oC
Note 2: VIN=1.8V for 1.0 and 1.2 version
Jul. 2008 Rev. 1.0
BCD Semiconductor Manufacturing Limited
6
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Electrical Characteristics (Continued)
AP2129-ADJ Electrical Characteristics
(CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Reference Voltage
Input Voltage
Maximum Output Current
Symbol
VREF
Conditions
VIN=1.8V
1mA≤IOUT≤300mA
VIN
Min
Typ
Max
Unit
0.748
0.8
0.816
V
6
V
1.8
IOUT(MAX)
450
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN-VOUT=1V,
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V
IOUT=30mA
0.06
%/V
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
VIN=VOUT+1V, IOUT=0mA
60
90
µA
ISTD
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
µA
PSRR
Ripple 1Vp-p
VIN=VOUT+1V
IQ
(∆VOUT/VOUT)
/∆T
Output Current Limit
ILIMIT
Short Current Limit
ISHORT
Soft Start Time
RMS Output Noise
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
±100
ppm/oC
400
mA
50
mA
50
µs
60
µVrms
IOUT=30mA, -40oC≤TJ≤85oC
VOUT=0V
tUP
VNOISE
o
TA=25 C, 10Hz ≤f≤100kHz
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
Shutdown Pull Down Resistance
60
Ω
3
MΩ
Thermal Shutdown
165
o
C
Thermal Shutdown Hysteresis
30
o
C
Jul. 2008 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
7
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics
100
3.5
VOUT=0.8V
90
3.0
Supply Current(µA)
Output Voltage (V)
2.0
1.5
o
TC=-40 C
1.0
o
TC=25 C
o
TC=125 C
VIN=4.4V
0.5
0
50
100
150
200
250
300
350
400
450
60
50
40
30
20
10
0
0.0
500
Output Current (mA)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage(V)
Figure 4. Output Voltage vs. Output Current
Figure 5. Supply Current vs. input Current
120
60
VOUT=0.8V
110
VOUT=0.8V
58
VIN=1.8V
VIN=1.8V
No Load
56
o
TC=25 C
100
54
Supply Current(µA)
Supply Current (µA)
o
Tc=25 C
70
2.5
0.0
No Load
80
90
80
70
60
52
50
48
46
44
50
40
0.00
42
0.03
0.06
0.09
0.12
0.15
0.18
0.21
0.24
0.27
40
-40
0.30
Output Current(A)
-20
0
20
40
60
80
o
Case Temperature( C)
Figure 6. Supply Current vs. Output Current
Figure 7. Supply Current vs. Case Temperature
Jul. 2008 Rev. 1.0
BCD Semiconductor Manufacturing Limited
8
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
0.90
VOUT=0.8V
320
IO=150mA
0.86
Ouput short to GND
240
VOUT=0.8V
0.84
Output Voltage(V)
Short Current (mA)
280
IO=10mA
0.88
VIN=1.8V
200
160
120
VIN=1.8V
0.82
0.80
0.78
0.76
80
0.74
40
0
0.72
-30
-15
0
15
30
45
60
0.70
75
-30
-15
0
o
Case Temperature( C)
0.9
0.8
0.8
0.7
0.7
Output Voltage (V)
Output Voltage (V)
1.0
0.9
0.6
0.5
o
TC=-40 C
o
TC=125 C
o
TC=25 C
VOUT=0.8V
0.2
0.1
45
60
75
Figure 9. Output Voltage vs. Case Temperature
1.0
0.3
30
o
Figure 8. Shot Output vs. Case Temperature
0.4
15
Case Temperature( C)
0.6
0.5
0.4
o
TC=-40 C
o
0.3
TC=25 C
0.2
TC=125 C
o
VOUT=0.8V
0.1
VIN=1.8V
0.0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0.0
0.0
Output Current(A)
No Load
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage(V)
Figure 10. Output Voltage vs. Output Current
Figure 11. Output Voltage vs. Input Voltage
Jul. 2008 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
9
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
1.0
0.9
Output Voltge (V)
0.8
0.7
IOUT
0.6
0.5
0.4
o
0.3
TC=-40 C
0.2
TC=25 C
o
0.0
VOUT
o
TC=85 C
VOUT=0.8V
0.1
0
1
2
3
4
5
6
Input Voltage (V)
Figure 13. Load Transient
Figure 12. Output Voltage vs. Input Voltage (IOUT=300mA)
(Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=0.8V)
IOUT
VIN
VOUT
VOUT
Figure 14. Load Transient
Figure 15. Line Transient
(Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V)
(Conditions: IOUT=30mA, CIN=COUT=1µF,
VIN=2.5 to 3.5V, VOUT=0.8V)
Jul. 2008 Rev. 1.0
BCD Semiconductor Manufacturing Limited
10
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
VIN
VOUT
VShutdown
VOUT
Figure 16. Line Transient
Figure 17. Soft Start Time
(Conditions: IOUT=30mA, CIN=COUT=1µF,
(Conditions: IOUT=0mA, CIN=COUT=1µF,
VIN=4 to 5V, VOUT=3.3V)
VShutdown=0 to 2V, VOUT=3.3V)
100
IOUT=10mA
IOUT=300mA
ripple=1Vpp, COUT=1µF, VOUT=0.8V
90
80
PSRR (dB)
70
VOUT
60
50
40
30
VShutdown
20
10
0
100
1000
10000
100000
Frequency (Hz)
Figure 18. Soft Start Time
Figure 19. PSSR vs. Frequency
(Conditions: IOUT=0mA, CIN=COUT=1µF,
VShutdown=0 to 2V, VOUT=0.8V)
Jul. 2008 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
11
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
100
2.0
IOUT=10mA
IOUT=300mA
ripple=1Vpp, COUT=1µF, VOUT=3.3V
90
80
1.6
Power Dissipation (W)
PSRR (dB)
70
60
50
40
30
20
1.4
1.2
1.0
0.8
0.6
0.4
10
0
VOUT=0.8V
No heatsink
1.8
0.2
100
1000
10000
0.0
-40
100000
Frequency (Hz)
-20
0
20
40
60
80
100
120
o
Case Temperature( C)
Figure 20. PSRR vs. Frequency
Figure 21. Power Dissipation vs. Case Temperature
Jul. 2008 Rev. 1.0
BCD Semiconductor Manufacturing Limited
12
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Application
VIN
VOUT
VIN
VOUT
AP2129
Shutdown
R1
ADJ
R2
CIN
1µF
COUT
1µF
GND
VOUT=0.8*(1+R1/R2) V
VIN
VOUT
VIN
VOUT
AP2129
Shutdown
CIN
1µF
COUT
1µF
GND
VOUT=1.0, 1.2, 3.3V
Figure 23. Typical Application of AP2129
Jul. 2008 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
13
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
1.250(0.049)
1.050(0.041)
0.950(0.037)
TYP
0.000(0.000)
0.100(0.004)
1.050(0.041)
1.150(0.045)
Jul. 2008 Rev. 1.0
BCD Semiconductor Manufacturing Limited
14
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE
IMPORTANT
NOTICE
BCD Semiconductor
BCD
Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products or
or specifispecifications herein.
cations
herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular
purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of
any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey any
any license
license under
under its
its patent
patent rights
rights or
or
other rights
other
rights nor
nor the
the rights
rights of
of others.
others.
MAIN SITE
SITE
MAIN
- Headquarters
BCD
Semiconductor Manufacturing Limited
BCD
Semiconductor
Manufacturing Limited
- Wafer
Fab
No.
1600, Zi
Xing Road,
Shanghai ZiZhu
Science-basedLimited
Industrial Park, 200241, China
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Tel:
Fax: +86-21-24162277
800,+86-21-24162266,
Yi Shan Road, Shanghai
200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL
- Wafer
FabSemiconductor Manufacturing Limited
BCD
Shanghai
SIM-BCD
Semiconductor Manufacturing Co., Ltd.
- IC Design
Group
800 Yi
Shan Road,
Shanghai
200233,
China Corporation
Advanced
Analog
Circuits
(Shanghai)
Tel: +86-21-6485
1491,YiFax:
0008200233, China
8F, Zone B, 900,
Shan+86-21-5450
Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Room
E, 5F,
Noble Center,
No.1006,Manufacturing
3rd Fuzhong Road,
Futian
District,Office
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Co., Ltd.
Shenzhen
BCDRui
Semiconductor
Company
Limited
518026,
China
Taiwan
Advanced
Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788