BCDSEMI AP2302LMTR-E1

Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
General Description
Features
The AP2302L linear regulator is designed to meet the
JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or
source up to 2A current continuously, providing
enough current for most DDR applications. Output
voltage is designed to track the reference voltage
within a ± 20mV tolerance for load regulation while
preventing shooting through on the output stage. Onchip thermal limiting provides protection against a
combination of high current and ambient temperature
which would create an excessive junction temperature.
·
Support Both DDR I (1.25VTT) and DDR II
(0.9VTT) Requirements
·
·
·
Source and Sink Current up to 2A
High Accuracy Output Voltage at Full-load
Adjustable VOUT by External Resistors
·
Shutdown for Standby or Suspend Mode
Operation with High-impedance Output
Applications
The AP2302L, used in conjunction with series termination resistors, provides an excellent voltage source
for active termination schemes of high speed transmission lines as those seen in high speed memory buses
and distributed backplane designs.
·
·
·
DDR-SDRAM Termination
DDR-II Termination
SSTL-2 Termination
The AP2302L is available in SOIC-8 and TO-252-5L
packages.
TO-252-5L
SOIC-8
Figure 1. Package Types of AP2302L
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Pin Configuration
M Package
(SOIC-8)
D Package
(TO-252-5L)
VIN
1
8
VCNTL
GND
2
7
VCNTL
5
4
REFEN
3
6
VCNTL
3
2
VOUT
4
5
VCNTL
1
VOUT
REFEN
VCNTL (TAB)
GND
VIN
Figure 2. Pin Configuration of AP2302L (Top View)
Pin Description
Pin Number
Pin Name
Function
SOIC-8
TO-252-5L
1
1
VIN
2
2
GND
3
4
REFEN
4
5
VOUT
Output Voltage.
5, 6, 7, 8
3
VCNTL
Supply Voltage for Internal Circuit (Internally Connected for SOIC-8), (TAB
for TO-252-5L).
Power Input.
Ground.
Reference Voltage Input and Chip Enable.
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Functional Block Diagram
VIN
VCNTL(TAB)
1 (1)
5,6,7,8 (3)
CURRENT
LIMIT
A(B)
A for SOIC-8
B for TO-252-5L
BANDGAP
REFEN
OUTPUT
CONTROL
3 (4)
4 (5)
VOUT
START UP
2 (2)
THERMAL
PROTECT
GND
Figure 3. Functional Block Diagram of AP2302L
Ordering Information
AP2302L
E1: Lead Free
Blank: Tin Lead
Circuit Type
Package
M: SOIC-8
D: TO-252-5L
Package
Temperature Range
SOIC-8
0 to 125oC
TO-252-5L
TR: Tape and Reel
Blank: Tube
Part Number
Marking ID
Packing Type
AP2302LM-E1
2302LM-E1
Tube
AP2302LMTR-E1
2302LM-E1
Tape & Reel
AP2302LD-E1
AP2302LD-E1
Tube
AP2302LDTR-E1
AP2302LD-E1
Tape & Reel
0 to 125oC
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Supply Voltage for Internal Circuit
VCNTL
7
V
PD
Internally Limited
W
ESD
2
KV
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
oC
Power Dissipation
ESD (Human Body Model)
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
SOIC-8
θJA
Package Thermal Resistance (Free Air)
160
oC/W
TO-252-5L
130
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
VCNTL (Note 2, 3) Supply Voltage for Internal Circuit
Typ
Max
Unit
3.3
6
V
VCNTL
V
2.5
DDR I
VIN
Power Input
1.6
DDR II
1.8
TJ
Junction Temperature
0
125
o
C
Note 2: Keep VCNTL ≥ VIN in operation power on and power off sequences.
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Electrical Characteristics
(TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.)
Parameter
Symbol
Output Offset Voltage
VOS
∆VOUT
DDR II
Quiescent Current of VCNTL
Leakage Current in Shutdown Mode
Min
Typ
Max
Unit
-20
0
20
mV
-20
0
20
IL=0 to 2A
DDR I
Load
Regulation
Conditions
ΙL=0Α (Note 4)
IL=0 to -2A
mV
IL=0 to 2A
-20
IL=0 to -2A
IQ
ISHDN
0
20
No Load
3
5
mA
VREFEN<0.2V, RL=180Ω
3
6
µA
Protection
Current Limit
ILIMIT
Thermal Shutdown Temperature
TSHDN
2.6
3.3V ≤VCNTL ≤5V
Thermal Shutdown Hysteresis
A
150
oC
50
oC
Shutdown Function
Shutdown Threshold Trigger
Output=High
0.8
Output=Low
0.2
V
Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN.
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Typical Performance Characteristics
6
Sinking Current (A)
Sourcing Current (A)
6
4
VCNTL=3.3V
2
-40
-20
0
20
40
60
4
VCNTL=3.3V
VIN=2.5V
VIN=2.5V
VOUT=1.25V
VOUT=1.25V
80
100
2
-40
120
-20
0
Figure 4. Sourcing Current vs. Junction Temperature
60
80
100
120
Figure 5. Sinking Current vs. Junction Temperature
650
650
Threshold Voltage (mV)
Threshold Voltage (mV)
40
Junction Temperature ( C)
Junction Temperature ( C)
600
550
VCNTL=3.3V
VIN=2.5V
500
-40
20
o
o
-20
0
20
40
60
80
100
600
550
VCNTL=5.0V
VIN=2.5V
500
120
-40
o
-20
0
20
40
60
80
100
120
o
Junction Temperature ( C)
Junction Temperature ( C)
Figure 7. Threshold Voltage vs. Junction Temperature
Figure 6. Threshold Voltage vs. Junction Temperature
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Typical Performance Characteristics (Continued)
40
Output Transient
Voltage (mV)
20
0
-20
2
Output
Current (A)
Output
Current (A)
Output Transient
Voltage (mV)
40
0
-2
20
0
-20
2
0
-2
-4
-4
Time (µs)
Time (µs)
Figure 8. 0.9VTT at 2A Transient Response
(Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF)
0.30
0.30
VIN=0.9V
VIN=0.85V
0.28
VIN=0.9V
VIN=0.85V
0.28
VIN=0.8V
VIN=0.8V
0.26
RDS(ON) (Ω)
0.26
RDS(ON) (Ω)
Figure 9. 1.25VTT at 2A Transient Response
(Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF)
0.24
0.22
0.24
0.22
0.20
0.20
VCNTL=3.3V
0.18
VCNTL=5V
0.18
VREFEN=1.0V
VREFEN=1.0V
0.16
0.16
25
50
75
100
25
125
50
75
100
125
o
o
Junction Temperature ( C)
Junction Temperature ( C)
Figure 11. RDS(on) vs. Junction Temperature
Figure 10. RDS(on) vs. Junction Temperature
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
7
Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Typical Performance Characteristics (Continued)
350
350
Package: SOIC-8
No Heatsink
Package: TO-252-5L
No Heatsink
300
2
Copper Area (mm )
2
Copper Area (mm )
300
250
200
o
TC=25 C
o
TC=50 C
150
o
TC=25 C
250
o
TC=50 C
o
TC=65 C
200
150
o
TC=65 C
100
100
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
6.0
8.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Power Dissipation (W)
Power Dissipation (W)
Figure 13. Copper Area vs. Power Dissipation
Figure 12. Copper Area vs. Power Dissipation
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
8
Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Typical Application
VCNTL = 3.3V
VIN = 2.5V
VIN
R1
REFEN
EN
RTT
CCNTL
VCNTL
AP2302L
CIN
VOUT
GND
R2
CSS
COUT
RDUMMY
Figure 14. Typical Application of AP2302L
R1 = R2 = 100KΩ, RTT = 50Ω / 33Ω / 25Ω
RDUMMY = 1KΩ, as for VOUT discharge when VIN is not present but VCNTL is present
CSS = 1µF, CIN = 470µF, CCNTL = 47µF, COUT =470µF
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
9
Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Mechanical Dimensions
SOIC-8
Unit: mm(inch)
4.800(0.189)
5.000(0.197)
7°
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
φ 0.800(0.031)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.190(0.007)
0.250(0.010)
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
10
Preliminary Datasheet
2A DDR TERMINATION REGULATOR
AP2302L
Mechanical Dimensions (Continued)
TO-252-5L
0.900(0.035)
1.250(0.049)
6.350(0.250)
6.700(0.264)
4.300(0.169)
5.500(0.217)
Unit: mm(inch)
2.180(0.086)
2.400(0.094)
4.800(0.189)
MIN
0.430(0.017)
0.600(0.023)
5.970(0.235)
6.220(0.245)
9.500(0.374)
10.400(0.410)
4.300(0.169)
5.400(0.213)
0.000(0.000)
0.250(0.010)
2.540(0.100)BSC
5.080(0.200)
BSC
0.450(0.018)
0.700(0.028)
0.430(0.017)
0.600(0.023)
1.400(0.055)
1.780(0.070)
Jul. 2006 Rev. 1. 2
2.550(0.100)
3.200(0.126)
BCD Semiconductor Manufacturing Limited
11
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particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
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