Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power. · · · · The APT13003E series are available in TO-92 and TO126 packages. High Switching Speed High Collector-Emitter Voltage Low Cost Bulk and Ammo Packing TO-92 Package and TO-126 Package Applications · · TO-92 (Bulk Packing) APT13003E Battery Chargers for Mobile Phone of BCD Solution Power Supply for DVD/STB of BCD Solution TO-92 (Ammo Packing) TO-126 Figure 1. Package Types of APT13003E Pin Configuration Z Package U Package TO-92 TO-126 3 Base 2 Collector 1 Emitter (Top View) 3 Emitter 2 Collector 1 Base (Front View) Figure 2. Pin Configurations of APT13003E May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Ordering Information APT13003 E1: Lead Free TR: Ammo Blank: Bulk Circuit Type Package Z: TO-92 U: TO-126 E: APT13003E Package TO-92 TO-126 Part Number Marking ID Packing Type APT13003EZ-E1 13003EZ-E1 Bulk APT13003EZTR-E1 13003EZ-E1 Ammo APT13003EU-E1 EU13003E Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Collector-Emitter Voltage (VBE=0) VCES 700 V Collector-Emitter Voltage (IB=0) VCEO 465 V Emitter-Base Voltage (IC=0) VEBO 9 V IC 1.5 A ICM 3 A IB 0.75 A IBM 1.5 A Collector Current Collector Peak Current (Pulse) (Note 2) Base Current Base Peak Current (Pulse) (Note 2) Power Dissipation, TA=25oC For TO-92 PTOT 1.1 W Power Dissipation, TC=25oC For TO-126 PTOT 20 W TJ 150 o TSTG -65 to 150 o Operating Junction Temperature Storage Temperature Range C C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Pulse test for Pulse Width < 5ms, Duty Cycle ≤ 10%. May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Thermal Characteristics Parameter Symbol For TO-92 Thermal Resistance (Junction-to-Case) Value Unit 83.3 RθJC For TO-126 oC/W 6.25 For TO-92 113.6 RθJA Thermal Resistance (Junction-to-Ambient) For TO-126 oC/W 96 Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Symbol Conditions ICEV VCE=700V Collector-Emitter Sustaining Voltage (IB=0) VCEO (sus) IC=100μA Collector-Emitter Saturation Voltage (Note 3) VCE (sat) Base-Emitter Saturation Voltage (Note 3) VBE (sat) DC Current Gain (Note 3) Output Capacitance hFE Cob Current Gain Bandwidth Product fT Turn-on Time with Resistive Load ton Storage Time with Resistive Load ts Fall Time with Resistive Load tf Min Typ Max Unit 10 μA 465 V IC=0.5A, IB=0.1A 0.17 0.3 IC=1.0A, IB=0.25A 0.29 0.4 IC=0.5A, IB=0.1A 1.0 IC=1.0A, IB=0.25A 1.2 IC=0.3A, VCE=2V 15 IC=0.5A, VCE=2V 13 IC=1.0A, VCE=2V 5 VCB=10V, f=0.1MHZ VCE=10V, IC=0.1A 17 V 30 25 16 pF 4 IC=1A, VCC=125V, IB1=0.2A, IB2=-0.2A, TP=25μS V MHz 0.3 1 1.8 3 0.28 0.4 μs Note 3: Pulse test for Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Typical Performance Characteristics 10 Collector Current IC (A) Collector Current IC (A) 10 1 0.1 DC 0.01 1 DC 0.1 0.01 1E-3 1 10 100 1 1000 10 100 1000 Collector-Emitter Clamp Voltage VCE (V) Collector-Emitter Clamp Voltage VCE (V) Figure 3. Safe Operating Areas (TO-92 Package) Figure 4. Safe Operating Areas (TO-126 Package) 2.00 125 1.75 IB=400mA 1.50 IB=300mA 1.25 IB=250mA IB=200mA 1.00 IB=150mA 0.75 IB=100mA 0.50 IB=50mA Collector Current IC (A) Power Derating Factor (%) 100 75 50 25 0.25 0.00 0 0 25 50 75 100 125 150 175 0 200 o 1 2 3 4 5 Collector-Emitter Voltage VCE (V) Case Temperature TC ( C) Figure 5. Power Derating Curve Figure 6. Static Characteristics May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Typical Performance Characteristics (Continued) 40 35 Collector-Emitter Voltage VCE (V) 10 VCE=5V VCE=1V o TA=125 C DC Current Gain 30 25 o TA=25 C 20 15 10 1 o o TJ=125 C TJ=25 C 0.1 hFE=5 5 0.01 0.1 0 0.01 0.1 1 1 Collector Current IC (A) Collector Current IC (A) Figure 8. Collector-Emitter Saturation Voltage Figure 7. DC Current Gain 1.1 20 1.0 18 0.9 16 o TJ=25 C hFE Base-Emitter Voltage VBE (V) VCE=2V, IC=0.5A 0.8 14 o TJ=125 C 0.7 12 0.6 hFE=5 0.5 0.1 10 25 1 Collector Current IC (A) 50 75 100 125 150 o Case Temperature ( C) Figure 10. hFE vs. Case Temperature Figure 9. Base-Emitter Saturation Voltage May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Mechanical Dimensions TO-92 (Bulk Packing) Unit: mm(inch) 1.100(0.043) 3.430(0.135) MIN 3.700(0.146) 3.300(0.130) 1.400(0.055) 0.360(0.014) 0.510(0.020) 0.000(0.000) 0.380(0.015) Φ1.600(0.063) MAX 4.700(0.185) 0.380(0.015) 0.550(0.022) 14.100(0.555) 14.500(0.571) 4.300(0.169) 4.400(0.173) 4.700(0.185) 1.270(0.050) TYP 2.440(0.096) 2.640(0.104) May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Mechanical Dimensions (Continued) TO-92 (Ammo Packing) Unit: mm(inch) 1.100(0.043) 1.270(0.050) Typ 4.500(0.177) 5.500(0.217) 0.360(0.014) 3.700(0.146) 0.000(0.000) 0.380(0.015) Φ 1.600(0.063) MAX 14.000(0.551) 0.510(0.020) 13.000(0.512) 3.300(0.130) 1.400(0.055) 3.430(0.135) MIN 4.700(0.185) 4.300(0.169) 4.400(0.173) 4.700(0.185) 0.380(0.015) 0.550(0.022) 2.540(0.100) Typ May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Mechanical Dimensions (Continued) 2.500(0.098 2.900(0.114) 1.100(0.043) 1.500(0.059) 3.900(0.154) 4.100(0.161) 7.400(0.291) 7.800(0.307) 10.600(0.417) 11.000(0.433) Unit: mm(inch) 0.000(0.000) 0.300(0.012) TO-126 3.000(0.118) 3.200(0.126) 1.170(0.046) 1.370(0.054) 2.300(0.091) 2.100(0.083) 15.300(0.602) 15.700(0.618) 0.660(0.026) 0.860(0.034) 2.290(0.090)TYP 0.450(0.018) 0.600(0.024) 4.480(0.176) 4.680(0.184) May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. 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