BL GALAXY ELECTRICAL 1H1G - - - 1H8G VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A HIGH EFFICIENCY RECTIFIER FEATURES Diffused junction Glass passivated chip junction High current capability High reliability High surge current capability R-1 MECHANICAL DATA Case:JEDEC R-1,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.20 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwise specified. Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. 1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G UNITS Maximum recurrent peak reverse voltage V RRM 50 100 200 300 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 210 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 300 400 600 800 1000 V Maximum average forw ard rectif ied current 9.5mm lead length, @TA =75 IF(AV) 1.0 A IFSM 30.0 A Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 1.0 A Maximum reverse current @TA =25 at rated DC blocking voltage @TA =100 Maximum reverse recovery time (Note1) VF 1.0 1.3 5.0 IR t rr 50 70 ns 20 15 pF (Note2) CJ Typical thermal resistance (Note3) RθJA 60 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Storage temperature range V A 100.0 Typical junction capacitance Operating junction temperature range 1.7 NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. /W www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0269027 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES 1H1G - - - 1H8G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 20/30 ns/cm FIG.3 -- FORWARD DERATING CURVE 1H1G-1H3G 1.0 1H6G-1H8G 1.0 1H4G-1H5G TJ=25 Pulse Width=300 µS 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0.75 AMPERES AVERAGE FORWARD CURRENT 10 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 0.5 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.25 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT 1H1G-1H5G 40 20 10 6 1H6G-1H8G 4 TJ=25℃ 2 1 0.1 0.2 0.4 1 2 4 10 20 REVERSE VOLTAGE,VOLTS 40 100 24 18 AMPERES 60 PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 30 200 100 TJ =125 8.3ms Single Half Sine-Wave 12 6 0 1 2 4 10 20 40 100 NUMBER OF CYCLES AT 60Hz www.galaxycn.com Document Number 0269027 BLGALAXY ELECTRICAL 2.