BILIN 1N60P

BL
GALAXY ELECTRICAL
1N60P
VOLTAGE RANGE: 45 V
CURRENT: 0.1 A
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
DO - 35(GLASS)
Metal s illicon junction m ajority carrier conduction
High current capability,Low forward voltage drop
Extrem ely low revers e current IR
Ultra s peed s witching characteris tics
Sm all tem perature coefficient of forward
ffffff characteris tics
Satis factory wave detection efficiency
For us e in RECORDER. TV. RADIO. TELEPHONE
as detectors ,s uper high s peed s witching circuits ,
s m all current rectifier
MECHANICAL DATA
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Parameters
Value
Symbols
Repetitive peak reverse voltage
V RRM
45
V
IF
50
mA
IFSM
500
mA
TSTG/TJ
XX- 55 ---- + 125
TL
230
TA =25
Forw ard continuous current
Peak f orw ard surge current (t=1s)
Storage and junction temperature range
UNITS
1N60P
Maximum lead temperature f or soldering during 10s at 4mm f rom case
ELECTRICAL CHARACTERISTICS
Parameters
Symbols
Test Conditions
I F=1m A
Forw ard voltage
Min.
Value
Typ.
Max.
0.24
0.5
UNITS
V
VF
I F =200m A
0.65
1.0
1.0
Reverse current
IR
VR =15V
0.5
Junction capacitance
CJ
VR =10V f=1MHz
6.0
pF
60.0
%
Vl=3V f=30MHz
C L=10pF R L=3.8K
Detection ef f iciency (See FIG. 4)
Reverse recovery time
Thermal resistance junction to ambient
t rr
I F=IR =1m A Irr =1m A R C=100
1.0
400
Rθ JA
A
ns
/W
www.galaxycn.com
Document Number 0265007
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
1N60P
FIG.1 -- FORWARD CURRENT VERSUS FORWARD
VOLTAGE (TYPICAL VALUES)
mA
FIG.2 -- REVERSE CURRENT VERSUS
CONTINUOUS REVERSE VOLTAGE
µA
0.70
500
450
0.60
I F 400
I R 0.50
350
300
0.40
250
200
0.30
150
0.20
100
0.10
50
0
0
0.2
0.4
0.6
0.8
1.0 V
VF
0
0
5
10
15
20
25
30 V
VR
FIG.3 -- JUNCTION CAPACITANCE VERSUS CONTINUOUS
REVERSE APPLIED VOLTAGE
FIG.4 -- DETECTION EFFICIENCY
MEASUREMENT CIRCUIT
output
D.U.T
Input:3VRMS
CL
10PF
RL
3.8K
www.galaxycn.com
Document Number 0265007
BLGALAXY ELECTRICAL
2.