BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation.(PC=200mW) z Excellent HFE Linearity. 2SA1577W Pb Lead-free APPLICATIONS z General purpose application. SOT-323 ORDERING INFORMATION Type No. 2SA1577W Marking Package Code HP/HQ/HR SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTF030 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor 2SA1577W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -1 μA DC current gain hFE VCE=-3V,IC=-10mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT VCE=-5V, IC= -20mA f=100MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 82 MAX UNIT 390 IC=-100mA, IB=-10mA -0.4 200 V MHz 7 pF CLASSIFICANTION OF hFE Rank P Q R Range 82-180 120-270 180-390 marking HP HQ HR Document number: BL/SSSTF030 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor 2SA1577W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping 2SA1577W SOT-323 3000/Tape&Reel Document number: BL/SSSTF030 Rev.A www.galaxycn.com 3