BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SC2859 Pb Lead-free z Power dissipation：PC=150mW. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2859 Marking Package Code WO/WY/WG SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~125 ℃ Document number: BL/SSSTC100 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2859 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE B MIN VCE=1V,IC=100mA 70 VCE=6V,IC=400mA 25 TYP VCE(sat) IC=100mA, IB=10mA 0.1 Collector output capacitance Cob VCB=6V,IE=0,f=1MHz 7 Transition frequency fT VCE=10V, IC= 1mA CLASSIFICATION Rank Range OF 0.25 V pF 300 MHz hFE(1) O Y G 70-140 120-240 200-400 Document number: BL/SSSTC100 Rev.A UNIT 400 Collector-emitter saturation voltage B MAX www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2859 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J C 1.0Typical K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 2SC2859 SOT-23 3000/Tape&Reel Document number: BL/SSSTC100 Rev.A www.galaxycn.com 3