BL GALAXY ELECTRICAL EGP30A(Z) --- EGP30K(Z) VOLTAGE RANGE: 50 --- 800 V CURRENT: 3.0 A HIGH EFFICIENCY RECTIFIER FEATURES DO - 27 Low cost Diffused junction Low leakage Low forward voltage drop High surge current capability Easily cleaned with alcohol,Isopropanol and similar s olvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--27,molded plas tic Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15grams Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unles s otherwise s pecified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EGP EGP EGP EGP EGP EGP EGP EGP UNITS 30A 30B 30C 30D 30F 30G 30J 30K Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 VRRM VRMS V DC 50 100 150 200 300 400 600 800 35 50 70 100 105 150 140 200 210 300 280 400 420 600 560 800 V V V IF(AV) 3.0 A IFSM 125.0 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage @ 3.0 A Maximum reverse current @TA =25 at rated DC blocking voltage @TA =125 Maximum reverse recovery time (Note1) Typical junction capacitance (Note2) Typical thermal resistance (Note3) Typical thermal resistance (Note4) Operating junction temperature range Storage temperature range VF 0.95 1.25 5.0 IR trr CJ RθJA RθJL TJ TSTG 1.7 A 100.0 50 95 NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 75 75 20 8.5 - 55 ---- + 150 - 55 ---- + 150 V ns pF /W /W www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. 4.Thermal resistance junction to lead. Document Number 0262010 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES EGP30A(Z)---EGP30K(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC t rr 50 N1. 10 N1. +0.5A D.U.T. (+) 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE1) -0 .2 5 A (-) -1 .0 A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 20/30 ns/cm EGP30F-EGP30G TJ=25 Pulse Width=300 µS 10 EGP30A-EGP30D EGP30J-EGP30K 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 100 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 1.8 2 3.0 2.0 Single Phase Half W ave 60Hz Resistive or Inductive Load 1.0 0 0 25 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 75 50 EGP30A-EGP30D EGP30F&EGP30K 0.1 1 4 10 REVERSE VOLTAGE,VOLTS 100 1000 PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE,pF TJ=25 125 0 75 100 125 150 FIG.5 -- PEAK FORWARD SURGE CURRENT 175 25 50 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE 150 z 175 150 TJ=125 . 3ms Single Half Sine-Wave 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60Hz www.galaxycn.com Document Number 0262010 BLGALAXY ELECTRICAL 2.