BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1505. z Excellent HFE Linearity. z Low noise. KTC3876 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code KTC3876 WO▪/WY▪/WG▪ SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC057 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor KTC3876 Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA VCE=1V,IC=100mA DC current gain hFE VCE=6V,IC=400mA TYP 70 O 25 Y 40 MAX UNIT 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA Transition frequency fT VCE=6V, IC= 20mA 300 MHz Collector output capacitance Cob VCB=6V,IE=0,f=1MHz 7 pF CLASSIFICATION OF 0.25 hFE Rank O Y G Range 70-140 120-240 200-400 Marking WO WY WG Document number: BL/SSSTC057 Rev.A V www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor KTC3876 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping KTC3876 SOT-23 3000/Tape&Reel Document number: BL/SSSTC057 Rev.A www.galaxycn.com 3