BILIN M28S

BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z
Excellent HFE Linearity.
z
High DC current gain.
M28S
Pb
Lead-free
APPLICATIONS
z
General purpose application, switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
Package Code
M28S
28S
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
1000
mA
PC
Collector Power Dissipation
200
mW
Tj,Tstg
Junction and Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC058
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
M28S
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=35V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
B
VCE=1V,IC=1mA
290
VCE=1V,IC=0.1A
300
VCE=1V,IC=0.3A
300
VCE=1V,IC=0.5A
300
Collector-emitter saturation voltage
VCE(sat)
IC=600mA, IB=20mA
Transition frequency
fT
VCE=10V, IC=50mA
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
CLASSIFICATION
OF
TYP
MAX
UNIT
1000
0.55
B
100
V
MHz
9
pF
hFE2
Rank
B
C
D
Range
300-550
500-700
650-1000
Document number: BL/SSSTC058
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
M28S
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
E
K
B
Dim
Min
Max
A
2.85
2.95
B
1.25
1.35
C
J
D
G
H
C
1.0Typical
D
0.37
0.43
E
0.35
0.48
G
1.85
1.95
H
0.02
0.1
J
K
0.1Typical
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
INFORMATION
Device
Package
Shipping
M28S
SOT-23
3000/Tape&Reel
Document number: BL/SSSTC058
Rev.A
www.galaxycn.com
3