BOOKHAM LMC10NEG3347-J57

Data Sheet
10Gb/s Compact InP MZ Modulator
with DWDM Laser
LMC10NEG
Negative Chirp - High Power
The LMC10NEG product, containing the Bookham Ultra High
Power Strained Layer DFB laser chip and negative chirp InP
MZ modulator, has been specifically designed for use in 10
Gb/s high performance regional metro and long haul DWDM
systems. By co-packaging the laser, locker, modulator and MZ
Bias Control Tap in a package with the same footprint area as
the industry standard 14-pin, the LMC10 series provides
Mach-Zehnder performance at a price similar to lower
performance alternatives. The provision of the MZ bias control
tap offers the option of MZ bias point optimisation for best
transmitted optical waveform over life. The high output power,
integral wavelength locking and high extinction ratio provides
excellent OSNR to allow the device to be employed on
multi-span long haul links.
Features:
• Mean modulated power >+4dBm over life
and temperature
• Negative Chirp (up to 1600ps/nm applications)
• Co-planar differential RF drive ≤2.7 volts
• Suitable for 50GHz ITU applications with +/-20pm λ
accuracy over life
• Low Power Dissipation
• Industry Standard 14-pin footprint area
• Pins on one side to allow increased system density
• C and L band
• Unrivalled performance vs size
• Qualified to Telcordia GR-468 CORE
• RoHS 5/6 compliant
Applications:
• 10Gb/s Long Haul DWDM multi-span dispersion
compensated links
• Regional Metro single spans with no
dispersion compensation
• 10Gb/s Overlay for Metro Networks
• 2.5Gb/s Long Haul DWDM multi-span
non dispersion compensated links
1
Data Sheet
Using the LMC10NEG
The LMC10NEG can be used in two ways:
Mode 1.
With dynamic modulator arm DC bias control where the MZ bias control tap is used in a control loop to optimise the optical
crossing point over life. Details of operating in this mode are given in applications note AN0136.
Mode 2.
Fixed modulator arm DC bias where the tap function is not used. Backwards compatible with the LMC10NEH device.
Characteristics
Parameter
Conditions
Min
External temperature of Tx case [1]
Modulated output power
Typ
Max
Unit
-5
75
°C
EOL over temperature
4
7
dBm
Power variation over case temperature
[2]
-1.3
0.5
dB
AC extinction ratio
EOL, 10.709Gb/s
[3]
Dispersion penalty over temperature
10.709Gb/s, EOL
[4]
Data bar arm bias
<9mA arm bias current
Data arm bias
Module and Modulator Parameters
Case temperature
2
[Tcase]
10
11.5
dB
2
dB
-4
-1.1
V
<9mA arm bias current
-2.2
-0.5
V
Modulation drive voltage
per arm, pk-pk, 10.709Gb/s [5]
1.8
2.7
V
Optical rise time, fall time
20% - 80%
35
ps
Tolerable link optical reflection
[6]
-14
dB
Output optical return loss
[7]
20
Optical crossing level (Mode 1)
[8]
48
Optical crossing level (Mode 2)
[9]
40
Modulator bandwidth
S21, -3dB
10
dB
50
52
%
60
%
GHz
Data Sheet
Characteristics (continued)
Parameter
Conditions
Min
Typ
Max
Unit
305
mA
-20
20
mA
20
85
mA
2.3
V
20
MHz
Laser Source Parameters
Laser forward current EOL
Change in laser forward current
C & L-Band. Wavelength locked
From SOL to EOL
Laser threshold current EOL
Laser forward voltage
EOL at locked wavelength
Laser linewidth
CW FWHM
Side mode suppression ratio [SMSR]
At locked wavelength
Average relative intensity noise [RIN]
200MHz to 8GHz
Parameter
Conditions
Min
Thermistor resistance
For locked wavelength [15]
4500
TEC current
5
40
50
dB
-140
dB/Hz
Max
Unit
10100
Ohms
EOL, T Case = 75°C
1.1
A
TEC voltage
EOL, T Case = 75°C
3
V
Module power dissipation
EOL, T Case = 75°C
1.5
4
W
Parameter
Conditions
Min
Typ
Max
Unit
Etalon photocurrent at
locked wavelength
EOL
0.1
2
mA
Reference photocurrent
at locked wavelength
EOL
0.1
2
mA
Etalon slope at locked wavelength
EOL [10]
0.3
7
uA/pm
Reference slope at locked wavelength
EOL
0.1
3
uA/pm
Etalon / reference current ratio
at locking point
[11]
0.2
2
ratio
Wavelength accuracy over life
and temperature
[12]
-20
20
pm
Laser drive current tuning coefficient
[13]
3
7
pm/mA
Typ
TEC and Thermal Parameters
Wavelength Locker Parameters
Note:
AC parameters such as extinction ratio and waveform crossing may be system dependent.
3
4
Data Sheet
Characteristics (continued)
Parameter
Conditions
Min
Typ
[14]
-5.1
-5
Max
Unit
Bias Control Tap Parameters
Tap bias voltage
Tap photocurrent
V
10
mA
S11 Test Mask
Note: AC parameters such as extinction ratio and waveform
crossing may be system dependent.
4
Data Sheet
Glossary
BFM
Back Facet Monitor diode
SOL
Start of life
CW
Continuous wave
Tcase
Case temperature
EOL
End of life
Pk-pk
Peak to peak
FWHM
Full width half maximum
BCT
Bias Control Tap
MZ
Mach-Zehnder interferometer
Notes to Characteristic Tables
[1] Refer to Bookham applications document AN0117 for
Tx case temperature measurement definition.
[11] Maintain the start of life locking ratio over life to hold
wavelength constant.
[2] Power variation over case temperature is measured
reference to 30°C case temperature.
[12] Assumes wavelength is set to ITU wavelength at start of
life, closed loop wavelength control by maintaining
constant locking ratio.
[3] Measured reference to a high speed sampling
oscilloscope (unfiltered). EOL figure does not include
modulator driver component ageing if applicable.
[4] Measured with 1600ps/nm chromatic dispersion, ITU-T
G652 optical fibre, 10.709Gb/s, 223-1 PRBS NRZ
sequence. The penalty calculation is made at a BER
level of 10-10. RX OSNR > 30dB [35dB target], RBW
of 0.1nm using a Bookham standard receiver with
differential drive to modulator. The device is driven
directly from a pattern generator. Receiver decision point
self optimised for amplitude and phase.
[13] Wavelength variation with change in laser drive current at
constant temperature.
[14] The MZ bias control tap responsivity is bias voltage
dependent.
[15] The thermistor current should not exceed 100 µA to
prevent self-heating effects. The thermistor resistance
varies with temperature according to the following
Steinhart-Hart equation, where C1= 1.2156x10-3, C2=
2.1925x10-4, C3=1.5241x10-7 for the thermistor type
used. Temperature is required in Kelvin.
[5] Measured at the input to the LMC10NEG. Driver
selection must take into account modulator driver to
transmitter transmission line losses. Refer to Bookham
applications document AN0137.
[6] Optical return loss of plant attached to LMC10NEG
fibre connector.
[7] Optical return loss looking back into the LMC10NEG
averaged over polarisation, with target value of -27dB.
[8] This is a requirement for the crossing control loop over
life and temperature. The accuracy over life and
temperature will be a function of the control loop circuit
design. Reference application note AN0136.
[9] Assuming 50% crossing level set at start of life. EOL
figure does not include modulator driver component
ageing if applicable.
[10] Slope of the etalon signal can be either positive
or negative.
5
Note: AC parameters such as extinction ratio and waveform
crossing may be system dependent.
Data Sheet
Absolute Maximum Ratings
Condition
Min
Storage case temperature
-40
Typ
Laser Current
Laser Voltage
Unit
85
C
600
mA
-2
MZ arm voltage (DC)
-12
[1]
MZ modulator arm bias currents (DC)
[2]
V
0
V
12
mA
BFM bias
-15
0
V
MZ bias control tap voltage
-6
0
V
10
mA
MZ bias control tap current
TEC voltage
[5]
-3
3
V
TEC current
[5]
-1.8
1.8
A
Output optical power [continuous operation]
13
dBm
Lead soldering temperature [3]
260
°C
Fiber bend radius
[4]
30
Notes:
[1]
[2]
[3]
[4]
[5]
With laser off. Do not forward bias the MZ arms or the bias control tap.
Do not exceed the MZ and bias control tap maximum currents.
Maximum soldering time of 10 seconds, Tx case and fiber must not be subjected to extremes of temperature.
Minimum fiber bend radius of 30mm, fiber may be damaged if exceeded.
Thermistor operating range must not be exceeded.
ESD Rating
This product is ESD compliant to Class 2 as defined by Telcordia TA-TSY-000870.
ESD precautions must be used when handling this device and are required in both
production and R&D environments.
6
Max
mm
Data Sheet
Schematic Diagram
Pin Out Table
7
Pin #
Function
Pin #
Function
1
Data bias
9
Case ground
2
Data bar bias
10
TEC -
3
Connect to ground
11
TEC +
4
MZ bias control tap
12
Laser anode
5
Case ground
13
Thermistor
6
Data bar
14
Etalon BFM anode
7
Case ground
15
BFM common cathode
8
Data
16
Reference BFM anode
Data Sheet
Pin Definitions
Pin 1 MZ data DC Bias input and Pin 2 MZ data-bar DC
Bias input
DC bias voltages for data and data-bar MZ arms. These pins
must be connected to a low noise negative DC voltage,
typically around -2V (WRT case). These voltages are defined
for each Tx in the deliverable data. A precision voltage source
must be used, which is capable of sourcing up to 10mA to
each pin. Refer to Bookham applications note AN0130 for
circuit implementation and filtering suggestions.
Pin 3
Connect to ground.
Pin 4 Bias Control Tap
The MZ bias control tap pin must be biased to -5V.
The supply should be regulated if the device is used
in mode 1 as the monitor diode responsivity is voltage
dependent.
Pins 5, 7 and 9 Ground
Package ground connections.
Pin 6 MZ Data-bar modulation input and Pin 8 MZ Data
modulation input
Operation is typically using differential electrical drive voltages
applied to both the Data and Data-bar MZ Modulator inputs.
Typical amplitude is 2.0V peak-to-peak. AC RF coupling must
be used.
Pin 10 TEC (-) and Pin 11 TEC (+)
The LMC10 contains a Peltier heatpump. Applying a negative
voltage on Pin 10 with respect to Pin 11 will cause the
internal optics to be cooled relative to the case temperature.
Reversing the applied voltage will cause the internal
structures to be heated. The heatpump must be used in
a feedback controlled circuit in conjunction with the
internal thermistor.
Pin 12 Laser Anode
The laser is operated with a forward bias current, the laser
cathode being connected internally to case ground.
Pin 13 Thermistor
The thermistor is used in the TEC control loop for keeping the
internal temperature at a constant value. It has a nominal
resistance of 10k Ohms at a temperature of 25ºC and is not
polarity sensitive, although one side of the thermistor is
connected to package ground. Operating current should be
limited to less than 100µA to prevent self heating errors.
The exact thermistor value is supplied with each Tx as
part of the deliverable test data to ensure the correct
operating wavelength.
Pin 14 Back Facet Monitor Diode Anode (Etalon)
The signal from this diode carries the spectral response of the
wavelength filter.
Pin 15 Back Facet Monitor Diode Common Cathode
Common connection for monitor diode cathodes.
Pin 16 Back Facet Monitor Diode Anode (Reference)
The signal from this diode is the reference signal and
indicates the power of the rear facet of the laser. The signals
from the reference and etalon monitor diodes are used in a
control loop to maintain the wavelength of the laser at the
defined lock point.
Operating the LMC10NEG
Control Schemes for the LMC10NEG
Arm DC Bias Voltage Control
A dynamic control scheme can be implemented to maintain
the bias points on the left and right arms of the MZ modulator
at the quadrature point. This will maintain the output pulse
train with a 50% eye crossing level. The control circuit needs
to track any over life change in the bias points, thereby
maintaining the 50% eye crossing condition.
Benefits of Using Control Schemes
The product can be used without the control scheme as
discussed above. But there are benefits of implementing
the control loop:
8
Maintaining the optical eye crossing to 50% through the life of
the product will minimise the variation in extinction ratio and
reduce variations in link dispersion penalty.
Summary
For more demanding applications at higher link lengths or
tighter link budgets the LMC10NEG may be used with a
dynamic control scheme which will provide MZ arm bias point
control for 50% optical eye crossing.
Use of the BCT in a control loop can offer improved optical
eye shape stability compared to open loop performance.
Data Sheet
Wavelength Locker for the LMC10NEG
Lockpoint
The wavelength locker for the LMC10NEG includes two photodiodes: the Reference photodiode provides a photocurrent
proportional to the laser chip facet power, and the Etalon photodiode provides a photocurrent related to wavelength (frequency).
In order to lock the LMC10NEG wavelength, a control circuit should be used which maintains the laser submount temperature
constant over life and then controls the wavelength by varying the laser forward current to keep the ratio of the etalon and
reference photodiode currents (Locking Ratio) constant. This may be achieved by keeping the discrimination value (LR x Iref) – Iet)
at zero, where LR is the target Locking Ratio.
Lockpoint
Refer to applications document AN0142 for further information on wavelength locking.
9
Data Sheet
Package Outline Drawing
10
Data Sheet
Typical 10Gb/s Eye Diagram
Test Conditions: 10.709Gb/s 223-1PRBS NRZ data.
Typical Over Fibre Performance (SMF-28)
Test Conditions: 10.709Gb/s 223-1PRBS NRZ data, BER10-12.
Penalty (dB)
Performance over fibre
Dispersion (ps/nm)
11
Data Sheet
LMC10 Mounting Guidelines
The device must be attached to a heat-sink capable of
dissipating a minimum of 4W without exceeding the
maximum case temperature. The surface of the heat-sink
must be smooth (< 0.8 micron Ra) and flat (<24.8 microns
over the area and not convex in form). Attachment screws,
thermal interface compounds or interface pads may be used
but must not exert stress upon the device. Refer to Bookham
applications note AN0117.
Note on Maximum Ratings and Handling Precautions
It is the nature of this device that unprotected semi-conductor
junctions are connected directly to external package pins.
Protection of these junctions would have an adverse effect
on the performance of the device or the flexibility in its
application and use. The user is requested to observe the
‘Absolute Minimum and Maximum Ratings’ in order to
prevent damage or destruction of the device. In particular
forward biasing the modulator, attenuator or power monitor
junctions will lead to catastrophic damage if the current or
voltage limits are exceeded. These junctions are also sensitive
to ESD and electrical transients. The laser is similarly sensitive
to reverse bias, ESD and electrical transients. These can lead
to catastrophic device damage. The user is requested to
ensure that operation of any control or bias circuits do not
introduce electrical transients or adverse bias conditions
during switch-on, switch-off or calibration and set-up
routines. Appropriate ESD precautions are required in both
production and R&D environments.
Applications Support
The following application notes are available to support customers using the LMC10NEG:
Component Mounting Recommendations For the Bookham
LMC10 InP MZ Transmitter Module
AN0117
LMC10NEG Dynamic MZ Modulator DC Bias Control Recommendations for
high Performance Power & Eye Mask Stability
AN0136
Recommended RF drivers for the LMC10 Integrated
Optical Transmitter Product Portfolio
AN0137
LMC10 Implementing Dynamic Wavelength Locker Loops
For DWDM Optical Systems
AN0142
Characterisation of the LMC10 InP MZ in a 2.5Gb/s
Optical Systems Environment
AN0138
Compact LMC10 InP MZ Evaluation Board User Document
AN0130
Optical component evaluation platforms are available for all Bookham Technology optical products.
Contact your regional sales representative for further information.
12
Data Sheet
Deliverable Data
The following deliverable data is provided as a paper copy with each device and can also
be made available as a text file from a customer specific site on a Bookham server with
password protection.
Parameter
Units
Thermistor operating resistance
Ohms
Laser bias current
mA
Wavelength operating
nm
MZ bias data
Volts
MZ bias data-bar
Volts
Locking reference current
mA
Locking etalon current
mA
Locking current ratio
-
Locker slope sign
+ or -
[1]
Laser threshold
mA
MZ drive voltage amplitude
Volts
Wavelength target (ITU-T)
nm
Thermistor temperature
°C
Laser tuning current coefficient
pm/mA
BFM etalon locker slope
µA/pm
BFM reference locker slope
µA/pm
Mean modulated optical power
dBm
AC extinction ratio
dB
Target eye crossing
%
Note:
[1] Positive sign indicates etalon photocurrent increasing with wavelength at lock point.
Refer to Bookham applications document AN0142 for locker slope definitions.
AC specified parameters may be derived from DC measurement data.
13
Data Sheet
RoHS Compliance
Bookham is fully committed to environment
protection and sustainable development and has
set in place a comprehensive program for
removing polluting and hazardous substances from
all of its products. The relevant evidence of RoHS
compliance is held as part of our controlled
documentation for each of our compliant products.
RoHS compliance parts are available to order,
please refer to the ordering information section for
further details.
Ordering Information:
LMC10NEG
(Wavelength)
****
– (Connector)
J28 = SC/PC
J57 = LC
J59 = MU
**** = last four digits of wavelength value
e.g. for λp=1533.47nm, ****=3347
WDM wavelength range:
C-Band 1528-1565 nm
L-Band 1570-1606 nm
Standard fibre length 1000 +/- 100 mm [blue jacket]
Other connector types are available on request
To order the LMC10 on an evaluation board, please use the prefix
EV in front on the product code e.g. EVLMC10NEG****-J28
Bookham reserve the right to change without notice.
Contact Information
North America
Bookham Worldwide
Headquarters
Europe
Paignton Office
Asia
Shenzhen Office
2584 Junction Ave.
San Jose
CA 95134
USA
Brixham Road
Paignton
Devon
TQ4 7BE
United Kingdom
2 Phoenix Road
Futian Free Trade Zone
Shenzhen 518038
China
• Tel: +1 408 919 1500
• Tel: +44 (0) 1803 66 2000
• Fax: +1 408 919 6083
• Fax: +44 (0) 1803 66 2801
• Fax: +86 755 33305805
+86 755 33305807
• Tel: +86 755 33305888
Important Notice
Performance figures, data and any illustrative material
provided in this data sheet are typical and must be
specifically confirmed in writing by Bookham before
they become applicable to any particular order or
contract. In accordance with the Bookham policy of
continuous improvement specifications may change
without notice. The publication of information in this
data sheet does not imply freedom from patent or other
protective rights of Bookham or others. Further details
are available from any Bookham sales representative.
www.bookham.com
sales@bookham.com
INVISIBLE LASER RADIATION
DO NOT VIEW DIRECTLY
WITH OPTICAL INSTRUMENTS
CLASS 1M LASER PRODUCT
14
REFERENCE IEC 60825-1 Edition 1.2
MAX POWER < 500mW
WAVELENGTH 1480 - 1620nm
CLASS IIIb LASER PRODUCT
This product complies with
21CFR 1040.10
ISO14001:1996
EMS 504193
TL9000 Rev 3.0 (ISO9001:2000)
FM15040
Caution - use of controls or adjustments or
performance of procedures other than
those specified herein may result in
hazardous radiation exposure.
BH12846 Rev 1.0 January 2007.
©Bookham 2005. Bookham is a registered trademark of Bookham Inc.