oH VE S CO AV R M AI SIO PL LA N IA BL S NT E TISP4600F3, TISP4700F3 *R HIGH VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4600F3, TISP4700F3 Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge Device VDRM V V(BO) V ‘4600 420 600 ‘4700 500 700 LM Package (Top View) T(A) NC R(B) MD4XATA NC - No internal connection on pin 2 Rated for International Surge Wave Shapes Wave Shape Standard 1 2 3 LMF Package (LM Pkg. with Formed Leads) (Top View) ITSP T(A) A 2/10 GR-1089-CORE 190 8/20 IEC 61000-4-5 175 10/160 FCC Part 68 110 10/700 FCC Part 68 ITU-T K.20/21 70 10/560 FCC Part 68 50 10/1000 GR-1089-CORE 45 1 2 3 NC R(B) MD4XAKC NC - No internal connection on pin 2 Device Symbol T .......................................UL Recognized Component Description These devices are designed to limit overvoltages between a system SD4XAA R and the protective ground. The TISP4700F3 is designed for insulation protection of systems such as LANs, and allows a float voltage of Terminals T and R correspond to the 500 V without clipping. IEC 60950 and UL 1950 have certain requirealternative line designators of A and B ments for incoming lines of telephone network voltage (TNV). Any protector from the line to ground must have a voltage rating of 1.6 times the equipment rated voltage. International and European equipment usually have maximum rated voltages of 230 V rms, 240 V rms or 250 V rms. Multiplying the 250 V value by 1.6 gives a protector VDRM value of 400 V. Allowing for operation down to 0 °C gives a VDRM value of 420 V at 25 °C. This need is met by the TISP4600F3. The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. A single device provides 2-point protection. Combinations of devices can be used for multipoint protection (e.g. 3-point protection between Ring, Tip and Ground). The TISP4x00F3 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. This protection device is in a DO-92 (LM) cylindrical plastic package. How To Order Device TISP4x00F3 Package Carrier LM, Straight Lead DO-92 Bulk Pack TISP4x00F3 LM, Straight Lead DO-92 TISP4x00F3 LMF, Formed Lead DO-92 For Standard Termination Finish Order As For Lead Free Termination Finish Order As TISP4x00F3LM TISP4x00F3LM-S Tape And Reel TISP4x00F3LMR TISP4x00F3LMR-S Tape And Reel TISP4x00F3LMFR TISP4x00F3LMFRS Insert x = 6 for TISP4600F3 and x= 7 for TISP4700F3 *RoHS Directive 2002/95/EC Jan 27 2003 including Annex NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4600F3, TISP4700F3 Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol TISP4600F3 TISP4700F3 Repetitive peak off-state voltage Value Unit ± 420 ± 500 VDRM V Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 190 1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 100 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 175 10/160 (FCC Part 68, 10/160 voltage wave shape) 110 IPPSM 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 70 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 70 10/560 (FCC Part 68, 10/560 voltage wave shape) 50 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 45 Non-repetitive peak on-state current (see Notes 1 and 2) 50/60 Hz, A 95 ITSM 1s Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A 6 A di T/dt 250 A/µs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. Initially, the TISP must be in thermal equilibrium with TJ = 25 °C. 2. These non-repetitive rated currents are peak values of either polarirty. The surge may be repeated after the TISP returns to its initial conditions. Recommended Operating Conditions Component Series resistor for GR-1089-CORE first-level surge survival Series resistor for ITU-T recommendation K.20 and K.21 R1, R2 Series resistor for FCC Part 68 9/720 survival Series resistor for FCC Part 68 10/160, 10/560 survival Min 15 0 0 10 Typ Min Typ Max Unit Ω Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter IDRM Repetitive peak offstate current Test Conditions VD = ±V DRM V(BO) Breakover voltage dv/dt = ±700 V/ms, R SOURCE = 300 Ω I(BO) dv/dt = ±700 V/ms, R SOURCE = 300 Ω IT = ±5 A, di/dt = +/-30 mA/ms IH dv/dt ID Coff Breakover current Holding current TISP4600F3 TISP4700F3 Max Unit ±5 µA ±600 ±700 V A ±0.1 Critical rate of rise of off-state voltage Linear voltage ramp, Maximum ramp value < 0.85V DRM Off-state current VD = ±50 V Off-state capacitance f = 100 kHz, Vd = 1 V rms, VD = 0, f = 100 kHz, Vd = 1 V rms, VD = -50 V ±0.15 A ±5 kV/µs 44 11 ±10 µA 74 20 pF NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4600F3, TISP4700F3 Thermal Characteristics Parameter RθJA NOTE Test Conditions Min Typ EIA/JESD51-3 PCB, IT = ITSM(1000) , TA = 25 °C, (see Note 3) Junction to free air thermal resistance Max Unit 120 °C/W 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000) , TA = 25 °C 57 3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. Parameter Measurement Information +i Quadrant I ITSP Switching Characteristic ITSM V(BO) I(BO) IH IDRM VD VDRM -v ID ID VD VDRM +v IDRM IH I(BO) V(BO) ITSM Quadrant III I Switching Characteristic ITSP -i Figure 1. Voltage-Current Characteristic for R-T Terminal Pair NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. PMXXAJ A TISP4600F3, TISP4700F3 Typical Characteristics OFF-STATE CURRENT vs 1.10 TC3LAF Normalized Breakover Voltage JUNCTION TEMPERATURE 100 ID - Off-State Current - µA 10 1 V D = 50 V 0·1 VD = -50 V NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC3MAIA 1.05 1.00 0·01 0.95 -25 0·001 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TJ - Junction Temperature - °C TJ - Junction Temperature - °C Figure 3. Figure 2. HOLDING CURRENT vs JUNCTION TEMPERATURE 0.5 TC3LAHA 0.4 I H - Holding Current - A -25 0.3 0.2 0.1 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - °C Figure 4. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4600F3, TISP4700F3 Thermal Information NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI4FA B ITSM(t) - Non-Repetitive Peak On-State Current - A 15 VGEN = 1500 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) 10 9 8 7 EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 6 5 4 3 2 1.5 0·1 1 10 t - Current Duration - s Figure 5. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 100 1000 TISP4600F3, TISP4700F3 APPLICATIONS INFORMATION IEC 60950, EN 60950, UL 1950 and CSA 22.2 No.950 The ‘950 family of standards have certain requirements for equipment (EUT) with incoming lines of telecommunication network voltage (TNV). Any protector from a TNV conductor to protective ground must have a voltage rating of at least 1.6 times the equipment rated supply voltage (Figure 6). The intent is to prevent the possibility of the a.c. mains supply voltage from feeding into the telecommunication network and creating a safety hazard. International and European equipment usually have maximum rated voltages of 230 V rms, 240 V rms or 250 V rms. Multiplying the 250 V value by 1.6 gives a protector VDRM value of 400 V. Allowing for operation down to 0 °C gives a VDRM requirement of 420 V at 25 °C. This need is met by the TISP4600F3. Overvoltage Protectors bridging insulation AC SUPPLY Telecommunication network connection EUT Insulation Th1 Th2 Protective ground connection 2 x TISP 4600F3 AI4XAI Figure 6. ’950 TNV Network Insulation from Protective Ground LAN Insulation Protection In Figure 7, a low-voltage protector, Th1, from the TISP40xxL1 series limits the inter-conductor voltage of the LAN and the high-voltage protector, Th2, limits the insulation stress to 700 V. The four diode bridge, D1 through D4, reduces the capacitive loading of the protectors on the LAN and means that only one TISP4700F3 is needed to be used for insulation protection of both LAN conductors. Low voltage diodes can be used as the maximum reverse voltage stress is limited to the V(BO) value of the TISP40xxL1 protector plus the diode forward recovery voltage. TISP 40xxL1 D3 D1 D4 D2 Th1 Th2 TISP 4700F3 AI4XAJ LAN CONDUCTORS Figure 7. LAN Protection NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4600F3, TISP4700F3 MECHANICAL DATA Device Symbolization Code Devices will be coded as follows: Device Symbolization Code TISP46 00F3 4600F3 TISP47 00F3 4700F3 NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4600F3, TISP4700F3 MECHANICAL DATA LM002 (DO-92) 2-Pin Cylindrical Plastic Package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LM002 Package (DO-92) 4.44 - 5.21 (.175 - .205) 3.17 - 4.19 (.125 - .165) 3.43 MIN. (.135) 2.03 - 2.67 (.080 - .105) 2.03 - 2.67 (.080 - .105) 4.32 - 5.34 (.170 - .210) MAX. 2.20 (.086) A 2 MIN. 2 12.7 (0.5) 0.40 - 0.56 (.016 - .022) 1 3 3 1 VIEW A 1.14 - 1.40 (.045 - .055) 0.35 - 0.41 (.014 - .016) 2.41 - 2.67 (.095 - .105) DIMENSIONS ARE: MILLIMETERS (INCHES) MD4XARA NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4600F3, TISP4700F3 MECHANICAL DATA LM002 (DO-92) - Formed Leads Version - 2-Pin Cylindrical Plastic Package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LMF002 (DO-92 ) - Formed Leads Version of LM002 4.44 - 5.21 (.175 - .205) 3.17 - 4.19 (.125 - .165) 3.43 MIN. (.135) 2.03 - 2.67 (.080 - .105) 2.03 - 2.67 (.080 - .105) 4.32 - 5.34 (.170 - .210) MAX. 2.20 (.086) MAX. 4.00 (.157) A 2 2 0.40 - 0.56 (.016 - .022) 1 3 3 1 VIEW A 2.40 - 2.90 (.094 - .114) 0.35 - 0.41 (.014 - .016) 2.40 - 2.90 (.094 - .114) DIMENSIONS ARE: MILLIMETERS (INCHES) MD4XASA NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4600F3, TISP4700F3 MECHANICAL DATA LM Tape Dimensions LM002 Package (Straight Lead DO-92) Tape LM002 Tape Dimensions Conform to the Requirements of EIA-468-B 11.70 - 13 .70 (.461 - .539) Body Indent Visible 2.50 MIN . (.098) 23.00 - 32.00 (.906 - 1.260) 17.66 - 27.68 (.695 - 1.090) 0.00 - 0.50 (.000 - .020) 8. 50 - 11.00 (.335 - .433) 8.50 - 9.75 (.335 - .384) 5.50 - 19.00 (.217 - .748) 17.50 - 19 .00 (.689 - .748) 2.14 - 3.14 (.084 - .124) Adhesive Tape on Reverse Side - Shown Dashed 3.70 - 4.30 (.146 - .169) VIEW A 4.68 - 5.48 (.184 - .216) 12.40 - 13.00 (.488 - .512) Tape Section Shown in View A Flat of DO-92 Body Towards Reel Axis Direction of Feed DIMENSIONS ARE: MILLIMETERS (INCHES) MD4X APD NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4600F3, TISP4700F3 MECHANICAL DATA LMF Tape Dimensions LMF002 Package (Formed Lead DO-92) Tape LMF002 Tape Dimensions Conform to the Requirements of EIA-468-B 11.70 - 13.70 (.461 - .539) Body Indent Visible 23.00 - 32.00 (.906 - 1.260) 17.66 - 27.68 (.695 -1.090) 15.50 - 16.53 (.610 - .650) 2.50 MIN. (.098) 0.00 - 0.50 (0.00 - .020) 8.50 - 11.00 (.335 - .433) 8.50 - 9.75 (.335 - .384) 5.50 - 19.00 (.217 - .748) 17.50 - 19.00 (.689 - .748) 4.88 - 5.28 (.192 - .208) DIA. Adhesive Tape on Reverse Side - Shown Dashed VIEW A 3.70 - 4.30 (.146 - .169) 3.41 - 4.21 (.134 - .166) 12.40 - 13.00 (.488 - .512) Tape Section Shown in View A Flat of DO-92 Body Towards Reel Axis Direction of Feed DIMENSIONS ARE: MILLIMETERS (INCHES) MD4XAQC “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.