AMERICAN BRIGHT OPTOELECTRONICS CORP. • Gap DOMILED BL-PDP-GJS Series Feature: 1. Surface mount LED. 2. 120° viewing angle. 3. Small package outline (LxWxH) of 3.2 x 2.8 x 1.8 mm. 4. Qualified according to JEDEC moisture sensitivity Level 2. 5. Compatible to both IR reflow soldering and TTW soldering. • Package Dimension: Recommended Solder Pad V.2 Page: 1 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. • Gap DOMILED BL-PDP-GJS Series Optical Characteristics: Part Number Chip Technology / Color BL-PDP-GJS-C10 GaP / • • • BIN G1 BIN G2 BIN H1 • BIN H2 Forward voltage Luminous Intensity @ If = 10mA Iv ( mcd ) 1.80 … 4.50 Green, 560 nm Chip Type @ If=10 mA. 2.05 V (typ.); 2.45 V (max) 1.80 … 2.24 2.24 … 2.80 2.80 … 3.55 3.55 … 4.50 Viewing angle at 50% Iv GaP Reverse current, IR @ VR = 5V, (max) 100 µA 120° NOTE: 1. Other luminous intensity groups are also available upon request. 2. Luminous intensity is measured with an accuracy of ±11%. 3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. 4. An optional Vf binning is also available upon request. Binning scheme is as per following table. • Absolute Maximum Ratings: Maximum Value DC forward current. 30 mA Peak pulse current; (tp ≤ 10 µs, Duty cycle = 0.005) 500 mA Reverse voltage. 5 V 100 °C Operating temperature. -40 … +100 °C Storage temperature. -40 … +100 °C LED junction temperature. Power dissipation ( at room temperature ) • Unit 75 mW Vf Binning: Vf Bin @ 10mA Forward voltage (V) 01 1.25 … 1.55 02 1.55 … 1.85 03 1.85 … 2.15 04 2.15 … 2.45 V.2 Page: 2 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. • Gap DOMILED BL-PDP-GJS Series Wavelength Grouping: Color Group BL-PDP; Pure Green Wavelength distribution (nm) Full 552.5 – 564.5 W 552.5 – 555.5 X 555.5 – 558.5 Y 558.5 – 561.5 Z 561.5 – 564.5 Wavelength is measured with an accuracy of ±1 nm. • Typical electro-optical characteristics curves: Fig. 1 Relative luminous intensity vs. forward current. Fig. 2 Forward current vs. forward voltage. Forward Current vs. Forward Voltage 4.0 35 3.5 Forward Current (mA) Relative intensity. Normalized at 10 mA. Intensity vs. DC Forw ard Current 3.0 2.5 2.0 1.5 1.0 0.5 30 25 20 15 10 5 0 0.0 0 5 10 15 20 25 30 1.0 35 1.2 1.4 Fig. 3 Radiation pattern 30° 20° 10° 1.6 1.8 2.0 2.2 2.4 2.6 Forward Voltage (V) FORW ARD CURRENT (m A) Fig. 4 Maximum forward current vs. temperature 0° 1.0 35 30 40° 0.8 50° 0.6 60° 0.4 70° 0.2 20 15 10 5 0 80° 90° Forward Current, If 25 0 0 10 20 30 40 50 60 70 80 Ambient Temperature V.2 Page: 3 of 5 90 100 AMERICAN BRIGHT OPTOELECTRONICS CORP. Gap DOMILED BL-PDP-GJS Series Fig. 5 Recommended IR-reflow Soldering Profile (acc. to IPC 9501) Classification Reflow Profile (JEDEC J-STD-020B) 275 250 235-240oC 10-30s 200 Ramp-up 3 oC/sec 183 oC o Temperature ( C) 225 175 60-150s 150 125 Ramp-down 6 oC/sec 100 Preheat 60-120s 75 50 360s max 25 0 50 100 150 200 Time (sec) Fig. 6 Recommended TTW Soldering Profile (acc. to CECC 00802). V.2 Page: 4 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. Gap DOMILED BL-PDP-GJS Series • Taping And Orientation. Reels come in quantity of 2000 units. Reel diameters is 180 mm . V.2 Page: 5 of 5