MICROSEMI MS2208

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2208
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATION
Features
•
•
•
•
•
HERMETIC METAL/CERAMIC PACKAGE
LOW THERMAL RESISTANCE
10:1 LOAD VSWR CAPABILITY
BALLASTED OVERLAY GEOMETRY
COMMON EMITTER CONFIGURATION
DESCRIPTION:
THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR
SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS
INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS
CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE
WIDTHS, DUTY CYCLES AND TEMPERATURES.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
PDISS
Parameter
Power Dissipation* (TC≤100ºC)
IC
VCC
TJ
T STG
Device Current *
Collector Supply Voltage*
Junction Temperature
Storage Temperature
Value
Unit
1360
W
27
55
250
-65 to +200
A
V
°C
°C
0.11
°C/W
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
*Applies only to rated RF amplifier operation
MSC0926.PDF 10-09-98
MS2208
ELECTRICAL SPECIFICATIONS (Tcase
(Tcase = 25°
25° C)
STATIC
Symbol
Bvebo
Bvcbo
Bvces
Ices
HFE
Test Conditions
IE = 30 mA
IC = 50 mA
IC = 50 mA
VBE = 50 mA
VCE = 5.0 V
IC=0 mA
IC=0 mA
VBE=0 V
VCE=50 V
IC=1 A
Min.
Value
Typ.
Max.
Unit
3.0
70
70
--10
-----------
------40
200
V
V
V
mA
B
DYNAMIC
Symbol
Min.
Value
Typ.
Max.
Unit
Pin = 70W
f=1090 MHz
VCC=50V
500
---
---
W
ηc
Pout
f=1090 MHz
VCC=50V
40
---
---
%
GP
Pout
f=1090 MHz
VCC=50V
8.5
---
---
dB
Pout
Load
Mismatch
Conditions
Test Conditions
Pout =500W Peak f=1090 MHz, Vcc=50V, VSWR=10:1, 10µ
µsec, 1% Duty, VSWR=5:1, 32µ
µsec, 2% Duty
Pulse width=32µ
µsec, Duty Cycle= 2%
IMPEDANCE DATA
ZIN(Ω)
FREQ
ZCL(Ω)
1030 MHz
4.35+ j 6.97
1.38- j 4.08
1090 MHz
4.38+ j 2.75
0.874- j 3.55
1120 MHz
4.69+ j 2.95
1.3- j 4.97
PIN=70W
VCC=50V
MSC0926.PDF 10-09-98
MS2208
PACKAGE MECHANICAL DATA
MSC0926.PDF 10-09-98