CDIL C42C2

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
C42C2
TO-126 (SOT-32) Plastic Package
C42C2
NPN PLASTIC POWER TRANSISTOR
Complementary C43C series
General Purpose Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-emitter voltage (VBE =0)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 1 A; IB = 50 mA
D.C. current gain
IC = 200 mA; VCE = 1 V
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-emitter voltage (VBE =0)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Continental Device India Limited
Data Sheet
VCES
VCEO
IC
Ptot
Tj
max.
max.
max.
max.
max.
40
30
3
12.5
150
V
V
A
W
°C
VCEsat
max.
0.5 V
hFE
min.
max.
100
220
VCES
VCEO
VEBO
IC
max.
max.
max.
max.
40
30
5.0
3.0
V
V
V
A
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C42C2
Collector current (Peak)*
Base current
Total power dissipation up to T A = 25°C
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
ICM
IB
Ptot
Ptot
Tj
Tstg
max.
5 A
max.
2 A
max.
2.1 W
max.
12.5 W
max.
150 ºC
–65 to +150 ºC
THERMAL RESISTANCE
From junction to case
From junction to ambient
Rth j–c
Rth j–a
=
=
10 °C/W
60 °C/W
ICES
max.
10 µA
IEBO
max.
100 µA
VCEO(sus)*
min.
30 V
VCEsat*
VBEsat*
max.
max.
0.5 V
1.3 V
hFE*
min.
max.
100
220
hFE*
min.
20
50 MHz
CHARACTERISTICS
T c = 25°C unless otherwise specified
Collector cutoff current
V BE = 0; VCE = Rated VCES
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown sus. voltages
IC = 100 mA; I B = 0
Saturation voltages
IC = 1 A; IB = 50 mA
IC = 1 A; I B = 100 mA
D.C. current gain
IC = 200 mA; VCE = 1 V
IC = 2 A; V CE = 1 V
Transition frequency
IC = 20 mA; V CE = 4 V
Collector capacitance
V CB = 10 V; I E = 0; f = 1 MHz
fT
typ.
Ccbo
max.
100 pF
Switching time
Delay time + Rise time
IC = 1 A; I B1 = IB2 = 0.1 A
td+tr
typ.
100 ns
ts
tf
typ.
typ.
500 ns
75 ns
Storage time + Fall time
V CC = 30 V; tp = 25 µsec
* Pulsed test: P W = 300 ms; duty cycle = 2%.
Continental Device India Limited
Data Sheet
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Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
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