Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C42C2 TO-126 (SOT-32) Plastic Package C42C2 NPN PLASTIC POWER TRANSISTOR Complementary C43C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (VBE =0) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 1 A; IB = 50 mA D.C. current gain IC = 200 mA; VCE = 1 V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-emitter voltage (VBE =0) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) Continental Device India Limited Data Sheet VCES VCEO IC Ptot Tj max. max. max. max. max. 40 30 3 12.5 150 V V A W °C VCEsat max. 0.5 V hFE min. max. 100 220 VCES VCEO VEBO IC max. max. max. max. 40 30 5.0 3.0 V V V A Page 1 of 3 C42C2 Collector current (Peak)* Base current Total power dissipation up to T A = 25°C Total power dissipation up to TC = 25°C Junction temperature Storage temperature ICM IB Ptot Ptot Tj Tstg max. 5 A max. 2 A max. 2.1 W max. 12.5 W max. 150 ºC –65 to +150 ºC THERMAL RESISTANCE From junction to case From junction to ambient Rth j–c Rth j–a = = 10 °C/W 60 °C/W ICES max. 10 µA IEBO max. 100 µA VCEO(sus)* min. 30 V VCEsat* VBEsat* max. max. 0.5 V 1.3 V hFE* min. max. 100 220 hFE* min. 20 50 MHz CHARACTERISTICS T c = 25°C unless otherwise specified Collector cutoff current V BE = 0; VCE = Rated VCES Emitter cut-off current IC = 0; VEB = 5 V Breakdown sus. voltages IC = 100 mA; I B = 0 Saturation voltages IC = 1 A; IB = 50 mA IC = 1 A; I B = 100 mA D.C. current gain IC = 200 mA; VCE = 1 V IC = 2 A; V CE = 1 V Transition frequency IC = 20 mA; V CE = 4 V Collector capacitance V CB = 10 V; I E = 0; f = 1 MHz fT typ. Ccbo max. 100 pF Switching time Delay time + Rise time IC = 1 A; I B1 = IB2 = 0.1 A td+tr typ. 100 ns ts tf typ. typ. 500 ns 75 ns Storage time + Fall time V CC = 30 V; tp = 25 µsec * Pulsed test: P W = 300 ms; duty cycle = 2%. Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 [email protected] www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3