CDIL CMBT4401

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT4401
SILICON PLANAR EPITAXIAL TRANSISTOR
N–P–N transistor
Marking
CMBT4401 = 2X
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage
Collector current (DC)
DC current gain
IC = 150 mA; VCE = 1 V
VCEO
IC
max.
max.
40 V
600 mA
hFE
Total power dissipation up to Tamb = 25 °C
Ptot
min.
max.
max
100
300
250 mW
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage
Collector–base voltage
Emitter–base voltage
Collector current (DC)
Total power dissipation up to Tamb = 25°C
Storage temperature range
Junction temperature
VCEO
VCBO
VEBO
IC
Ptot
Tstg
Tj
max.
40 V
max.
60 V
max.
6 V
max.
600 mA
max
250 mW
–55 to +150 ° C
max.
150 ° C
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBT4401
THERMAL RESISTANCE
From junction to ambient
Rth j–a
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collector–emitter breakdown voltage
IC = 1.0 mA; IB = 0
Collector–base breakdown voltage
IC = 100 µA; IE = 0
Emitter–base breakdown voltage
IE = 100 µA; IC = 0
Base cut–off current
VCE = 35 V; VEB = 0.4 V
Collector cut–off current
VCE = 35 V; VEB = 0.4 V
D.C. current gain
IC = 0.1 mA; VCE = 1 V
IC = 1.0 mA; VCE = 1 V
IC = 10 mA; VCE = 1 V
IC = 150 mA; VCE = 1 V
IC = 500 mA; VCE = 2 V
Saturation voltage
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
Transition frequency
f = 100 MHz; IC = 20 mA; VCE = 10 V
Collector–base capacitance
IE = 0; VCB = 5 V; f = 100 kHz
Emitter–base capacitance
IC = 0; VBE = 0.5 V; f = 100 kHz
Input impedance; f = 1 kHz;
IC = 1 mA; VCE = 10 V
Small–signal curent gain; f = 1 kHz;
IC = 1 mA; VCE = 10 V
Continental Device India Limited
40 V
V(BR)CBO >
60 V
V(BR)EBO >
6 V
IBEX
<
0.1 µA
ICEX
<
0.1 µA
hFE
hFE
hFE
hFE
hFE
>
>
>
VCEsat
VBEsat
<
0.4 V
0.75 to 0.95 V
VCEsat
VBEsat
<
<
0.75 V
1.2 V
fT
>
250 MHz
Ccb
<
8 pF
C eb
<
30 pF
hie
min.
max.
hre
min. 0.1 × 10 –4
max. 30 × 10–4
hfe
Data Sheet
500 K/W
V(BR)CEO >
Voltage feed–back ratio
IC = 1 mA; VCE = 10 V; f = 1 kHz
=
20
40
80
100 to 300
40
>
min.
max.
1 kΩ
8 kΩ
40
500
Page 2 of 3
CMBT4401
Output admittance; f = 1 kHz;
IC = 1 mA; VCE = 10 V
Switching times (resistive load)
Turn–on time
IC = 150 mA; IB1 = 15 mA;
VCC = 30 V; VEB = 2 V
delay time
rise time
Turn–off time
IC = 150 mA; VCC = 30 V;
IB1 = IB2 = 15 mA
storage time
fall time
hoe
min.
max.
1 µS
30 µS
td
tr
max.
max.
15 ns
20 ns
ts
tf
max.
max.
225 ns
30 ns
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3