CDIL CMBT5401

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT5401
SILICON P–N–P HIGH–VOLTAGE TRANSISTOR
P–N–P transistor
Marking
CMBT5401 = 2L
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to Tamb = 25°C
Collector–emitter saturation voltage
IC = 50 mA; IB = 5 mA
D.C. current gain
IC = 10 mA; VCE = –5 V
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current
Continental Device India Limited
Data Sheet
–V CBO
–V CEO
–IC
Ptot
max.
max.
max.
max
160
150
500
250
VCEsat
max.
0,5 V
hFE
–V CBO
–V CEO
–V EBO
–IC
V
V
mA
mW
60 to 240
max.
max.
max.
max.
160
150
5
500
V
V
V
mA
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CMBT5401
Total power dissipation up to Tamb = 25°C
Junction temperature
Storage temperature
Ptot
Tj
Tstg
THERMAL RESISTANCE
from junction to ambient
Rth j–a
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector cut–off current
–I CBO
IE = 0; –VCB = 120 V
–I CBO
IE = 0; –VCB = 120 V; Tamb = 150 °C
Breakdown voltages
–V(BR)CEO
IC = 1 mA; IB = 0
–V(BR)CBO
IC = 100 µA; IE = 0
–V(BR)EBO
IC = 0; IE = 10 µA
Saturation voltages
–V CEsat
–IC = 10 mA; –IB = 1 mA
–VBEsat
–IC = 50 mA; –IB = 5 mA
D.C. current gain
IC = 1 mA; –VCE = 5 V
max
250 mW
max.
150 ° C
–55 to +150 ° C
500 K/W
max.
max.
50 nA
50 µA
min.
min.
min.
150 V
160 V
5 V
max.
max.
0.2 V
1 V
–V CEsat
–VBEsat
max.
max.
0.5 V
1 V
hFE
min.
min.
max.
50
60
240
IC = 10 mA; –VCE = 5 V
hFE
IC = 50 mA; –VCE = 5 V
Small–signal current gain
hFE
min.
50
hfe
min.
max.
40
200
Co
max.
6 pF
fT
min.
max.
100 MHz
300 MHz
F
max.
8 dB
IC = 1 mA; –VCE = 10 V; f = 1 kHz
Output capacitance at f = 1 MHz
IE = 0; –VCB = 10 V
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 10 V; Tamb = 25 °C
Noise figure at RS = 10 Ω
IC = 200 µA; –VCE = 5 V
f = 10 Hz to 15.7 kHz; Tamb = 25 °C
Continental Device India Limited
Data Sheet
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Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
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