Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25°C Collector–emitter saturation voltage IC = 50 mA; IB = 5 mA D.C. current gain IC = 10 mA; VCE = –5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current Continental Device India Limited Data Sheet –V CBO –V CEO –IC Ptot max. max. max. max 160 150 500 250 VCEsat max. 0,5 V hFE –V CBO –V CEO –V EBO –IC V V mA mW 60 to 240 max. max. max. max. 160 150 5 500 V V V mA Page 1 of 3 CMBT5401 Total power dissipation up to Tamb = 25°C Junction temperature Storage temperature Ptot Tj Tstg THERMAL RESISTANCE from junction to ambient Rth j–a CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut–off current –I CBO IE = 0; –VCB = 120 V –I CBO IE = 0; –VCB = 120 V; Tamb = 150 °C Breakdown voltages –V(BR)CEO IC = 1 mA; IB = 0 –V(BR)CBO IC = 100 µA; IE = 0 –V(BR)EBO IC = 0; IE = 10 µA Saturation voltages –V CEsat –IC = 10 mA; –IB = 1 mA –VBEsat –IC = 50 mA; –IB = 5 mA D.C. current gain IC = 1 mA; –VCE = 5 V max 250 mW max. 150 ° C –55 to +150 ° C 500 K/W max. max. 50 nA 50 µA min. min. min. 150 V 160 V 5 V max. max. 0.2 V 1 V –V CEsat –VBEsat max. max. 0.5 V 1 V hFE min. min. max. 50 60 240 IC = 10 mA; –VCE = 5 V hFE IC = 50 mA; –VCE = 5 V Small–signal current gain hFE min. 50 hfe min. max. 40 200 Co max. 6 pF fT min. max. 100 MHz 300 MHz F max. 8 dB IC = 1 mA; –VCE = 10 V; f = 1 kHz Output capacitance at f = 1 MHz IE = 0; –VCB = 10 V Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 10 V; Tamb = 25 °C Noise figure at RS = 10 Ω IC = 200 µA; –VCE = 5 V f = 10 Hz to 15.7 kHz; Tamb = 25 °C Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 [email protected] www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3